[{"data":1,"prerenderedAt":-1},["ShallowReactive",2],{"part:st:SCT20N120AG":3},{"part":4,"mfr":25,"docs":31,"aliases":40,"alts":46,"breadcrumbs":47,"related":53,"more_from_mfr":62},{"id":5,"pn":6,"pn_norm":6,"series":7,"package":7,"lifecycle":8,"summary":9,"params":10,"features":20,"pins":7,"updated_at":21,"category_name":22,"category_name_en":23,"category_path":24},2572,"SCT20N120AG",null,"active","Automotive-grade silicon carbide Power MOSFET 1200 V, 20 A, 189 mΩ (typ., TJ=150 °C), in an HiP247 package",[11,14,17],[12,13],"VDS","1200 V",[15,16],"ID","20 A",[18,19],"RDS(on)","189 mΩ",[],"2026-10-10T13:01:01.608Z","SiC \u002F GaN 宽禁带器件","SiC \u002F GaN Wide-Bandgap","discrete.sic",{"slug":26,"name_en":27,"name_cn":28,"website":29,"is_domestic":30},"st","STMicroelectronics","意法半导体","https:\u002F\u002Fwww.st.com",false,[32],{"id":5,"filename":33,"title":34,"pages":35,"size_bytes":36,"lang":7,"doc_version":7,"published_at":7,"role":37,"outline_count":38,"thumb":39},"ST-SCT20N120AG.pdf","Datasheet - SCT20N120AG - Automotive-grade silicon carbide Power MOSFET 1200 V, 20 A, 189 mΩ (typ., TJ=150 °C), in an HiP247 package",13,297871,"datasheet",7,"\u002Fthumbs\u002F99\u002F73\u002F997381d21fd24bd017b3d708a20746ae264249ac2ae8813601aaa3987001b9f6.jpg",[41,44],{"alias_norm":42,"kind":43},"SCT20N120","base",{"alias_norm":45,"kind":43},"SCT20N120A",[],[48,52],{"name":49,"name_en":50,"path":51},"分立器件","Discretes","discrete",{"name":22,"name_en":23,"path":24},[54,56,59],{"pn_display":42,"pn_norm":42,"package":7,"summary":55},"Silicon carbide Power MOSFET 1200 V, 169 mΩ typ., 20 A in an HiP247 package",{"pn_display":57,"pn_norm":57,"package":7,"summary":58},"SCT20N120H","Silicon carbide Power MOSFET 1200 V, 20 A, 189 mΩ (typ., TJ=150 °C), in an H²PAK-2 package",{"pn_display":60,"pn_norm":60,"package":7,"summary":61},"SCT20N170AG","Automotive-grade silicon carbide Power MOSFET 1700 V, 64 mΩ typ., 43 A in an HiP247 package",[63,66,70,74,78,81,83,87,91,94,97,99],{"pn_display":64,"pn_norm":64,"summary":65},"MASTERGAN4","High power density 600V half-bridge driver with two enhancement mode GaN HEMT",{"pn_display":67,"pn_norm":68,"summary":69},"A2F12M12W2-F1","A2F12M12W2F1","ACEPACK 2 power module, fourpack topology, 1200 V, 13 mΩ typ. SiC Power MOSFET gen.2 with NTC",{"pn_display":71,"pn_norm":72,"summary":73},"A2F20M65W3-FC","A2F20M65W3FC","ACEPACK 2 power module, fourpack topology, 650 V, 23 mΩ typ. SiC Power MOSFET gen.3 with NTC and capacitance",{"pn_display":75,"pn_norm":76,"summary":77},"A2U12M12W2-F1C","A2U12M12W2F1C","ACEPACK 2 power module, 3-level topology, 1200 V, 100 A based on SiC Power MOSFET",{"pn_display":79,"pn_norm":79,"summary":80},"GANSPIN611","High-voltage half-bridge GaN motor driver",{"pn_display":82,"pn_norm":82,"summary":80},"GANSPIN612",{"pn_display":84,"pn_norm":85,"summary":86},"M2P45M12W2-1LA","M2P45M12W21LA","Automotive‑grade ACEPACK DMT‑32 power module, sixpack topology, 1200 V, 47.5 mΩ typ. SiC Power MOSFET with NTC",{"pn_display":88,"pn_norm":89,"summary":90},"M2TP80M12W2-2LA","M2TP80M12W22LA","Automotive-grade ACEPACK DMT‑32 power module, 3-phase four wire PFC topology, 1200 V, 84 mΩ typ. SiC Power MOSFET with rectifier diode and NTC",{"pn_display":92,"pn_norm":92,"summary":93},"MASTERGAN1L","600 V half-bridge enhancement mode GaN HEMT with high voltage driver",{"pn_display":95,"pn_norm":95,"summary":96},"MASTERGAN2","High power density 600V Half bridge driver with two enhancement mode GaN HEMT",{"pn_display":98,"pn_norm":98,"summary":93},"MASTERGAN4L",{"pn_display":100,"pn_norm":100,"summary":101},"MASTERGAN6","650 V GaN half-bridge with gate driver and protections"]