[{"data":1,"prerenderedAt":-1},["ShallowReactive",2],{"part:st:SCT20N120":3},{"part":4,"mfr":25,"docs":31,"aliases":40,"alts":41,"breadcrumbs":42,"related":48,"more_from_mfr":58},{"id":5,"pn":6,"pn_norm":6,"series":7,"package":7,"lifecycle":8,"summary":9,"params":10,"features":20,"pins":7,"updated_at":21,"category_name":22,"category_name_en":23,"category_path":24},2571,"SCT20N120",null,"active","Silicon carbide Power MOSFET 1200 V, 169 mΩ typ., 20 A in an HiP247 package",[11,14,17],[12,13],"VDS","1200 V",[15,16],"ID","20 A",[18,19],"RDS(on)","169 mΩ",[],"2026-10-10T13:01:01.608Z","SiC \u002F GaN 宽禁带器件","SiC \u002F GaN Wide-Bandgap","discrete.sic",{"slug":26,"name_en":27,"name_cn":28,"website":29,"is_domestic":30},"st","STMicroelectronics","意法半导体","https:\u002F\u002Fwww.st.com",false,[32],{"id":5,"filename":33,"title":34,"pages":35,"size_bytes":36,"lang":7,"doc_version":7,"published_at":7,"role":37,"outline_count":38,"thumb":39},"ST-SCT20N120.pdf","Datasheet - SCT20N120 - Silicon carbide Power MOSFET 1200 V, 169 mΩ typ., 20 A in an HiP247 package",12,546430,"datasheet",8,"\u002Fthumbs\u002F09\u002F4f\u002F094f129bc911f18a2cd59a1953869a010f1528aedd81857fa3ad7f1a0ba6237e.jpg",[],[],[43,47],{"name":44,"name_en":45,"path":46},"分立器件","Discretes","discrete",{"name":22,"name_en":23,"path":24},[49,52,55],{"pn_display":50,"pn_norm":50,"package":7,"summary":51},"SCT20N120AG","Automotive-grade silicon carbide Power MOSFET 1200 V, 20 A, 189 mΩ (typ., TJ=150 °C), in an HiP247 package",{"pn_display":53,"pn_norm":53,"package":7,"summary":54},"SCT20N120H","Silicon carbide Power MOSFET 1200 V, 20 A, 189 mΩ (typ., TJ=150 °C), in an H²PAK-2 package",{"pn_display":56,"pn_norm":56,"package":7,"summary":57},"SCT20N170AG","Automotive-grade silicon carbide Power MOSFET 1700 V, 64 mΩ typ., 43 A in an HiP247 package",[59,62,66,70,74,77,79,83,87,90,93,95],{"pn_display":60,"pn_norm":60,"summary":61},"MASTERGAN4","High power density 600V half-bridge driver with two enhancement mode GaN HEMT",{"pn_display":63,"pn_norm":64,"summary":65},"A2F12M12W2-F1","A2F12M12W2F1","ACEPACK 2 power module, fourpack topology, 1200 V, 13 mΩ typ. SiC Power MOSFET gen.2 with NTC",{"pn_display":67,"pn_norm":68,"summary":69},"A2F20M65W3-FC","A2F20M65W3FC","ACEPACK 2 power module, fourpack topology, 650 V, 23 mΩ typ. SiC Power MOSFET gen.3 with NTC and capacitance",{"pn_display":71,"pn_norm":72,"summary":73},"A2U12M12W2-F1C","A2U12M12W2F1C","ACEPACK 2 power module, 3-level topology, 1200 V, 100 A based on SiC Power MOSFET",{"pn_display":75,"pn_norm":75,"summary":76},"GANSPIN611","High-voltage half-bridge GaN motor driver",{"pn_display":78,"pn_norm":78,"summary":76},"GANSPIN612",{"pn_display":80,"pn_norm":81,"summary":82},"M2P45M12W2-1LA","M2P45M12W21LA","Automotive‑grade ACEPACK DMT‑32 power module, sixpack topology, 1200 V, 47.5 mΩ typ. SiC Power MOSFET with NTC",{"pn_display":84,"pn_norm":85,"summary":86},"M2TP80M12W2-2LA","M2TP80M12W22LA","Automotive-grade ACEPACK DMT‑32 power module, 3-phase four wire PFC topology, 1200 V, 84 mΩ typ. SiC Power MOSFET with rectifier diode and NTC",{"pn_display":88,"pn_norm":88,"summary":89},"MASTERGAN1L","600 V half-bridge enhancement mode GaN HEMT with high voltage driver",{"pn_display":91,"pn_norm":91,"summary":92},"MASTERGAN2","High power density 600V Half bridge driver with two enhancement mode GaN HEMT",{"pn_display":94,"pn_norm":94,"summary":89},"MASTERGAN4L",{"pn_display":96,"pn_norm":96,"summary":97},"MASTERGAN6","650 V GaN half-bridge with gate driver and protections"]