[{"data":1,"prerenderedAt":-1},["ShallowReactive",2],{"part:st:SCT070H120G37":3},{"part":4,"mfr":26,"docs":32,"aliases":41,"alts":42,"breadcrumbs":43,"related":49,"more_from_mfr":53},{"id":5,"pn":6,"pn_norm":7,"series":8,"package":8,"lifecycle":9,"summary":10,"params":11,"features":21,"pins":8,"updated_at":22,"category_name":23,"category_name_en":24,"category_path":25},2561,"SCT070H120G3-7","SCT070H120G37",null,"active","Silicon carbide Power MOSFET 1200 V, 63 mΩ typ., 30 A in an H²PAK-7 package",[12,15,18],[13,14],"VDS","1200 V",[16,17],"ID","30 A",[19,20],"RDS(on)","63 mΩ",[],"2026-10-10T13:01:01.608Z","SiC \u002F GaN 宽禁带器件","SiC \u002F GaN Wide-Bandgap","discrete.sic",{"slug":27,"name_en":28,"name_cn":29,"website":30,"is_domestic":31},"st","STMicroelectronics","意法半导体","https:\u002F\u002Fwww.st.com",false,[33],{"id":5,"filename":34,"title":35,"pages":36,"size_bytes":37,"lang":8,"doc_version":8,"published_at":8,"role":38,"outline_count":39,"thumb":40},"ST-SCT070H120G37.pdf","Datasheet - SCT070H120G3-7 - Silicon carbide Power MOSFET 1200 V, 63 mΩ typ., 30 A in an H²PAK-7 package",14,687270,"datasheet",8,"\u002Fthumbs\u002F5c\u002F88\u002F5c888e544715b47ed9c97a7edaab86d7c291737e84982e013bfe1dc34be6ea9b.jpg",[],[],[44,48],{"name":45,"name_en":46,"path":47},"分立器件","Discretes","discrete",{"name":23,"name_en":24,"path":25},[50],{"pn_display":51,"pn_norm":51,"package":8,"summary":52},"SCT070H120G3AG","Automotive-grade silicon carbide Power MOSFET 1200 V, 63 mΩ typ., 30 A in an H²PAK-7 package",[54,57,61,65,69,72,74,78,82,85,88,90],{"pn_display":55,"pn_norm":55,"summary":56},"MASTERGAN4","High power density 600V half-bridge driver with two enhancement mode GaN HEMT",{"pn_display":58,"pn_norm":59,"summary":60},"A2F12M12W2-F1","A2F12M12W2F1","ACEPACK 2 power module, fourpack topology, 1200 V, 13 mΩ typ. SiC Power MOSFET gen.2 with NTC",{"pn_display":62,"pn_norm":63,"summary":64},"A2F20M65W3-FC","A2F20M65W3FC","ACEPACK 2 power module, fourpack topology, 650 V, 23 mΩ typ. SiC Power MOSFET gen.3 with NTC and capacitance",{"pn_display":66,"pn_norm":67,"summary":68},"A2U12M12W2-F1C","A2U12M12W2F1C","ACEPACK 2 power module, 3-level topology, 1200 V, 100 A based on SiC Power MOSFET",{"pn_display":70,"pn_norm":70,"summary":71},"GANSPIN611","High-voltage half-bridge GaN motor driver",{"pn_display":73,"pn_norm":73,"summary":71},"GANSPIN612",{"pn_display":75,"pn_norm":76,"summary":77},"M2P45M12W2-1LA","M2P45M12W21LA","Automotive‑grade ACEPACK DMT‑32 power module, sixpack topology, 1200 V, 47.5 mΩ typ. SiC Power MOSFET with NTC",{"pn_display":79,"pn_norm":80,"summary":81},"M2TP80M12W2-2LA","M2TP80M12W22LA","Automotive-grade ACEPACK DMT‑32 power module, 3-phase four wire PFC topology, 1200 V, 84 mΩ typ. SiC Power MOSFET with rectifier diode and NTC",{"pn_display":83,"pn_norm":83,"summary":84},"MASTERGAN1L","600 V half-bridge enhancement mode GaN HEMT with high voltage driver",{"pn_display":86,"pn_norm":86,"summary":87},"MASTERGAN2","High power density 600V Half bridge driver with two enhancement mode GaN HEMT",{"pn_display":89,"pn_norm":89,"summary":84},"MASTERGAN4L",{"pn_display":91,"pn_norm":91,"summary":92},"MASTERGAN6","650 V GaN half-bridge with gate driver and protections"]