[{"data":1,"prerenderedAt":-1},["ShallowReactive",2],{"part:st:SCT040W120G34AG":3},{"part":4,"mfr":26,"docs":32,"aliases":41,"alts":47,"breadcrumbs":48,"related":54,"more_from_mfr":61},{"id":5,"pn":6,"pn_norm":7,"series":8,"package":8,"lifecycle":9,"summary":10,"params":11,"features":21,"pins":8,"updated_at":22,"category_name":23,"category_name_en":24,"category_path":25},2548,"SCT040W120G3-4AG","SCT040W120G34AG",null,"active","Automotive-grade silicon carbide Power MOSFET 1200 V, 40 mΩ typ., 40 A in an HiP247-4 package",[12,15,18],[13,14],"VDS","1200 V",[16,17],"ID","40 A",[19,20],"RDS(on)","40 mΩ",[],"2026-10-10T13:01:01.608Z","SiC \u002F GaN 宽禁带器件","SiC \u002F GaN Wide-Bandgap","discrete.sic",{"slug":27,"name_en":28,"name_cn":29,"website":30,"is_domestic":31},"st","STMicroelectronics","意法半导体","https:\u002F\u002Fwww.st.com",false,[33],{"id":5,"filename":34,"title":35,"pages":36,"size_bytes":37,"lang":8,"doc_version":8,"published_at":8,"role":38,"outline_count":39,"thumb":40},"ST-SCT040W120G34AG.pdf","Datasheet - SCT040W120G3-4AG - Automotive-grade silicon carbide Power MOSFET 1200 V, 40 mΩ typ., 40 A in an HiP247-4 package",12,520266,"datasheet",7,"\u002Fthumbs\u002F73\u002F8a\u002F738a1852538c7ece9ded0bbaf6f882890b1fc283bd2907d6e1898e197666f99f.jpg",[42,45],{"alias_norm":43,"kind":44},"SCT040W120G34","base",{"alias_norm":46,"kind":44},"SCT040W120G34A",[],[49,53],{"name":50,"name_en":51,"path":52},"分立器件","Discretes","discrete",{"name":23,"name_en":24,"path":25},[55,58],{"pn_display":56,"pn_norm":43,"package":8,"summary":57},"SCT040W120G3-4","Silicon carbide Power MOSFET 1200 V, 40 mΩ typ., 40 A in an HiP247-4 package",{"pn_display":59,"pn_norm":59,"package":8,"summary":60},"SCT040W120G3AG","Automotive-grade silicon carbide Power MOSFET 1200 V, 40 mΩ typ., 40 A in an HiP247 package",[62,65,68,71,75,78,82,86,90,94,97,99],{"pn_display":63,"pn_norm":63,"summary":64},"MASTERGAN4","High power density 600V half-bridge driver with two enhancement mode GaN HEMT",{"pn_display":66,"pn_norm":66,"summary":67},"MASTERGAN4L","600 V half-bridge enhancement mode GaN HEMT with high voltage driver",{"pn_display":69,"pn_norm":69,"summary":70},"STPSC40G12","1200 V, 40 A power Schottky high surge silicon carbide diode",{"pn_display":72,"pn_norm":73,"summary":74},"STPSC40G12-Y","STPSC40G12Y","Automotive 1200 V, 40 A power Schottky high surge silicon carbide diode",{"pn_display":76,"pn_norm":76,"summary":77},"STPSC4H065","650 V, 4 A high surge silicon carbide power Schottky diode",{"pn_display":79,"pn_norm":80,"summary":81},"A2F12M12W2-F1","A2F12M12W2F1","ACEPACK 2 power module, fourpack topology, 1200 V, 13 mΩ typ. SiC Power MOSFET gen.2 with NTC",{"pn_display":83,"pn_norm":84,"summary":85},"A2F20M65W3-FC","A2F20M65W3FC","ACEPACK 2 power module, fourpack topology, 650 V, 23 mΩ typ. SiC Power MOSFET gen.3 with NTC and capacitance",{"pn_display":87,"pn_norm":88,"summary":89},"A2U12M12W2-F1C","A2U12M12W2F1C","ACEPACK 2 power module, 3-level topology, 1200 V, 100 A based on SiC Power MOSFET",{"pn_display":91,"pn_norm":92,"summary":93},"A2U12M12W2-F2","A2U12M12W2F2","ACEPACK 2 power module, 3‑level topology, 1200 V, 13 mΩ typ. SiC Power MOSFET gen.2 with NTC",{"pn_display":95,"pn_norm":95,"summary":96},"GANSPIN611","High-voltage half-bridge GaN motor driver",{"pn_display":98,"pn_norm":98,"summary":96},"GANSPIN612",{"pn_display":100,"pn_norm":101,"summary":102},"M2P45M12W2-1LA","M2P45M12W21LA","Automotive‑grade ACEPACK DMT‑32 power module, sixpack topology, 1200 V, 47.5 mΩ typ. SiC Power MOSFET with NTC"]