[{"data":1,"prerenderedAt":-1},["ShallowReactive",2],{"part:st:SCT025W120G34":3},{"part":4,"mfr":26,"docs":32,"aliases":41,"alts":42,"breadcrumbs":43,"related":49,"more_from_mfr":57},{"id":5,"pn":6,"pn_norm":7,"series":8,"package":8,"lifecycle":9,"summary":10,"params":11,"features":21,"pins":8,"updated_at":22,"category_name":23,"category_name_en":24,"category_path":25},2531,"SCT025W120G3-4","SCT025W120G34",null,"active","Silicon carbide Power MOSFET 1200 V, 27 mΩ typ., 56 A in an HiP247-4 package",[12,15,18],[13,14],"VDS","1200 V",[16,17],"ID","56 A",[19,20],"RDS(on)","27 mΩ",[],"2026-10-10T13:01:01.608Z","SiC \u002F GaN 宽禁带器件","SiC \u002F GaN Wide-Bandgap","discrete.sic",{"slug":27,"name_en":28,"name_cn":29,"website":30,"is_domestic":31},"st","STMicroelectronics","意法半导体","https:\u002F\u002Fwww.st.com",false,[33],{"id":5,"filename":34,"title":35,"pages":36,"size_bytes":37,"lang":8,"doc_version":8,"published_at":8,"role":38,"outline_count":39,"thumb":40},"ST-SCT025W120G34.pdf","Datasheet - SCT025W120G3-4 - Silicon carbide Power MOSFET 1200 V, 27 mΩ typ., 56 A in an HiP247-4 package",12,510777,"datasheet",7,"\u002Fthumbs\u002Fec\u002Fb2\u002Fecb2e7b6bd29945377b842401b4951d72fc38476476ed23496938dae9aaa5bbf.jpg",[],[],[44,48],{"name":45,"name_en":46,"path":47},"分立器件","Discretes","discrete",{"name":23,"name_en":24,"path":25},[50,54],{"pn_display":51,"pn_norm":52,"package":8,"summary":53},"SCT025W120G3-4AG","SCT025W120G34AG","Automotive-grade silicon carbide Power MOSFET 1200 V, 27 mΩ typ., 56 A in an HiP247-4 package",{"pn_display":55,"pn_norm":55,"package":8,"summary":56},"SCT025W120G3AG","Automotive-grade silicon carbide Power MOSFET 1200 V, 27 mΩ typ., 56 A in an HiP247 package",[58,61,65,69,73,76,78,82,86,89,92,94],{"pn_display":59,"pn_norm":59,"summary":60},"MASTERGAN4","High power density 600V half-bridge driver with two enhancement mode GaN HEMT",{"pn_display":62,"pn_norm":63,"summary":64},"A2F12M12W2-F1","A2F12M12W2F1","ACEPACK 2 power module, fourpack topology, 1200 V, 13 mΩ typ. SiC Power MOSFET gen.2 with NTC",{"pn_display":66,"pn_norm":67,"summary":68},"A2F20M65W3-FC","A2F20M65W3FC","ACEPACK 2 power module, fourpack topology, 650 V, 23 mΩ typ. SiC Power MOSFET gen.3 with NTC and capacitance",{"pn_display":70,"pn_norm":71,"summary":72},"A2U12M12W2-F1C","A2U12M12W2F1C","ACEPACK 2 power module, 3-level topology, 1200 V, 100 A based on SiC Power MOSFET",{"pn_display":74,"pn_norm":74,"summary":75},"GANSPIN611","High-voltage half-bridge GaN motor driver",{"pn_display":77,"pn_norm":77,"summary":75},"GANSPIN612",{"pn_display":79,"pn_norm":80,"summary":81},"M2P45M12W2-1LA","M2P45M12W21LA","Automotive‑grade ACEPACK DMT‑32 power module, sixpack topology, 1200 V, 47.5 mΩ typ. SiC Power MOSFET with NTC",{"pn_display":83,"pn_norm":84,"summary":85},"M2TP80M12W2-2LA","M2TP80M12W22LA","Automotive-grade ACEPACK DMT‑32 power module, 3-phase four wire PFC topology, 1200 V, 84 mΩ typ. SiC Power MOSFET with rectifier diode and NTC",{"pn_display":87,"pn_norm":87,"summary":88},"MASTERGAN1L","600 V half-bridge enhancement mode GaN HEMT with high voltage driver",{"pn_display":90,"pn_norm":90,"summary":91},"MASTERGAN2","High power density 600V Half bridge driver with two enhancement mode GaN HEMT",{"pn_display":93,"pn_norm":93,"summary":88},"MASTERGAN4L",{"pn_display":95,"pn_norm":95,"summary":96},"MASTERGAN6","650 V GaN half-bridge with gate driver and protections"]