[{"data":1,"prerenderedAt":-1},["ShallowReactive",2],{"part:st:SCT025HU120G3AG":3},{"part":4,"mfr":25,"docs":31,"aliases":40,"alts":46,"breadcrumbs":47,"related":53,"more_from_mfr":54},{"id":5,"pn":6,"pn_norm":6,"series":7,"package":7,"lifecycle":8,"summary":9,"params":10,"features":20,"pins":7,"updated_at":21,"category_name":22,"category_name_en":23,"category_path":24},2530,"SCT025HU120G3AG",null,"active","Automotive-grade silicon carbide Power MOSFET 1200 V, 27 mΩ typ., 60 A in an HU3PAK package",[11,14,17],[12,13],"VDS","1200 V",[15,16],"ID","60 A",[18,19],"RDS(on)","27 mΩ",[],"2026-10-10T13:01:01.608Z","SiC \u002F GaN 宽禁带器件","SiC \u002F GaN Wide-Bandgap","discrete.sic",{"slug":26,"name_en":27,"name_cn":28,"website":29,"is_domestic":30},"st","STMicroelectronics","意法半导体","https:\u002F\u002Fwww.st.com",false,[32],{"id":5,"filename":33,"title":34,"pages":35,"size_bytes":36,"lang":7,"doc_version":7,"published_at":7,"role":37,"outline_count":38,"thumb":39},"ST-SCT025HU120G3AG.pdf","Datasheet - SCT025HU120G3AG - Automotive-grade silicon carbide Power MOSFET 1200 V, 27 mΩ typ., 60 A in an HU3PAK package",14,954682,"datasheet",8,"\u002Fthumbs\u002F82\u002Fce\u002F82ceb0927fd19f6277692fb15f36d5df0154410ef7c567769cd482c83631aafd.jpg",[41,44],{"alias_norm":42,"kind":43},"SCT025HU120G3","base",{"alias_norm":45,"kind":43},"SCT025HU120G3A",[],[48,52],{"name":49,"name_en":50,"path":51},"分立器件","Discretes","discrete",{"name":22,"name_en":23,"path":24},[],[55,58,62,66,69,71,75,79,82,85,87,90],{"pn_display":56,"pn_norm":56,"summary":57},"MASTERGAN4","High power density 600V half-bridge driver with two enhancement mode GaN HEMT",{"pn_display":59,"pn_norm":60,"summary":61},"A2F12M12W2-F1","A2F12M12W2F1","ACEPACK 2 power module, fourpack topology, 1200 V, 13 mΩ typ. SiC Power MOSFET gen.2 with NTC",{"pn_display":63,"pn_norm":64,"summary":65},"A2U12M12W2-F1C","A2U12M12W2F1C","ACEPACK 2 power module, 3-level topology, 1200 V, 100 A based on SiC Power MOSFET",{"pn_display":67,"pn_norm":67,"summary":68},"GANSPIN611","High-voltage half-bridge GaN motor driver",{"pn_display":70,"pn_norm":70,"summary":68},"GANSPIN612",{"pn_display":72,"pn_norm":73,"summary":74},"M2P45M12W2-1LA","M2P45M12W21LA","Automotive‑grade ACEPACK DMT‑32 power module, sixpack topology, 1200 V, 47.5 mΩ typ. SiC Power MOSFET with NTC",{"pn_display":76,"pn_norm":77,"summary":78},"M2TP80M12W2-2LA","M2TP80M12W22LA","Automotive-grade ACEPACK DMT‑32 power module, 3-phase four wire PFC topology, 1200 V, 84 mΩ typ. SiC Power MOSFET with rectifier diode and NTC",{"pn_display":80,"pn_norm":80,"summary":81},"MASTERGAN1L","600 V half-bridge enhancement mode GaN HEMT with high voltage driver",{"pn_display":83,"pn_norm":83,"summary":84},"MASTERGAN2","High power density 600V Half bridge driver with two enhancement mode GaN HEMT",{"pn_display":86,"pn_norm":86,"summary":81},"MASTERGAN4L",{"pn_display":88,"pn_norm":88,"summary":89},"SCT011HU75G3AG","Automotive-grade silicon carbide Power MOSFET 750 V, 11.4 mΩ typ., 110 A in an HU3PAK package",{"pn_display":91,"pn_norm":92,"summary":93},"SCT012W90G3-4AG","SCT012W90G34AG","Automotive-grade silicon carbide Power MOSFET 900 V, 12 mΩ typ., 110 A in an HiP247-4 package"]