[{"data":1,"prerenderedAt":-1},["ShallowReactive",2],{"part:st:SCT014TO65G3":3},{"part":4,"mfr":25,"docs":31,"aliases":40,"alts":41,"breadcrumbs":42,"related":48,"more_from_mfr":49},{"id":5,"pn":6,"pn_norm":6,"series":7,"package":7,"lifecycle":8,"summary":9,"params":10,"features":20,"pins":7,"updated_at":21,"category_name":22,"category_name_en":23,"category_path":24},2514,"SCT014TO65G3",null,"active","Silicon carbide Power MOSFET 650 V, 13.5 mΩ typ., 110 A in a TO-LL package",[11,14,17],[12,13],"VDS","650 V",[15,16],"ID","110 A",[18,19],"RDS(on)","13.5 mΩ",[],"2026-10-10T13:01:01.608Z","SiC \u002F GaN 宽禁带器件","SiC \u002F GaN Wide-Bandgap","discrete.sic",{"slug":26,"name_en":27,"name_cn":28,"website":29,"is_domestic":30},"st","STMicroelectronics","意法半导体","https:\u002F\u002Fwww.st.com",false,[32],{"id":5,"filename":33,"title":34,"pages":35,"size_bytes":36,"lang":7,"doc_version":7,"published_at":7,"role":37,"outline_count":38,"thumb":39},"ST-SCT014TO65G3.pdf","Datasheet - SCT014TO65G3 - Silicon carbide Power MOSFET 650 V, 13.5 mΩ typ., 110 A in a TO-LL package",15,1845533,"datasheet",8,"\u002Fthumbs\u002F87\u002F69\u002F87699801c2a9ebb22e9961b9b6f0f2f402ed61094f010182f4a4dedbe1482c61.jpg",[],[],[43,47],{"name":44,"name_en":45,"path":46},"分立器件","Discretes","discrete",{"name":22,"name_en":23,"path":24},[],[50,53,57,61,65,69,72,74,78,82,85,88],{"pn_display":51,"pn_norm":51,"summary":52},"MASTERGAN4","High power density 600V half-bridge driver with two enhancement mode GaN HEMT",{"pn_display":54,"pn_norm":55,"summary":56},"A2F12M12W2-F1","A2F12M12W2F1","ACEPACK 2 power module, fourpack topology, 1200 V, 13 mΩ typ. SiC Power MOSFET gen.2 with NTC",{"pn_display":58,"pn_norm":59,"summary":60},"A2F20M65W3-FC","A2F20M65W3FC","ACEPACK 2 power module, fourpack topology, 650 V, 23 mΩ typ. SiC Power MOSFET gen.3 with NTC and capacitance",{"pn_display":62,"pn_norm":63,"summary":64},"A2U12M12W2-F1C","A2U12M12W2F1C","ACEPACK 2 power module, 3-level topology, 1200 V, 100 A based on SiC Power MOSFET",{"pn_display":66,"pn_norm":67,"summary":68},"A2U12M12W2-F2","A2U12M12W2F2","ACEPACK 2 power module, 3‑level topology, 1200 V, 13 mΩ typ. SiC Power MOSFET gen.2 with NTC",{"pn_display":70,"pn_norm":70,"summary":71},"GANSPIN611","High-voltage half-bridge GaN motor driver",{"pn_display":73,"pn_norm":73,"summary":71},"GANSPIN612",{"pn_display":75,"pn_norm":76,"summary":77},"M2P45M12W2-1LA","M2P45M12W21LA","Automotive‑grade ACEPACK DMT‑32 power module, sixpack topology, 1200 V, 47.5 mΩ typ. SiC Power MOSFET with NTC",{"pn_display":79,"pn_norm":80,"summary":81},"M2TP80M12W2-2LA","M2TP80M12W22LA","Automotive-grade ACEPACK DMT‑32 power module, 3-phase four wire PFC topology, 1200 V, 84 mΩ typ. SiC Power MOSFET with rectifier diode and NTC",{"pn_display":83,"pn_norm":83,"summary":84},"MASTERGAN1L","600 V half-bridge enhancement mode GaN HEMT with high voltage driver",{"pn_display":86,"pn_norm":86,"summary":87},"MASTERGAN2","High power density 600V Half bridge driver with two enhancement mode GaN HEMT",{"pn_display":89,"pn_norm":89,"summary":84},"MASTERGAN4L"]