[{"data":1,"prerenderedAt":-1},["ShallowReactive",2],{"part:st:SCT011HU75G3AG":3},{"part":4,"mfr":25,"docs":31,"aliases":40,"alts":46,"breadcrumbs":47,"related":53,"more_from_mfr":54},{"id":5,"pn":6,"pn_norm":6,"series":7,"package":7,"lifecycle":8,"summary":9,"params":10,"features":20,"pins":7,"updated_at":21,"category_name":22,"category_name_en":23,"category_path":24},2509,"SCT011HU75G3AG",null,"active","Automotive-grade silicon carbide Power MOSFET 750 V, 11.4 mΩ typ., 110 A in an HU3PAK package",[11,14,17],[12,13],"VDS","750 V",[15,16],"ID","110 A",[18,19],"RDS(on)","11.4 mΩ",[],"2026-10-10T13:01:01.608Z","SiC \u002F GaN 宽禁带器件","SiC \u002F GaN Wide-Bandgap","discrete.sic",{"slug":26,"name_en":27,"name_cn":28,"website":29,"is_domestic":30},"st","STMicroelectronics","意法半导体","https:\u002F\u002Fwww.st.com",false,[32],{"id":5,"filename":33,"title":34,"pages":35,"size_bytes":36,"lang":7,"doc_version":7,"published_at":7,"role":37,"outline_count":38,"thumb":39},"ST-SCT011HU75G3AG.pdf","Datasheet - SCT011HU75G3AG - Automotive-grade silicon carbide Power MOSFET 750 V, 11.4 mΩ typ., 110 A in an HU3PAK package",15,976545,"datasheet",8,"\u002Fthumbs\u002Ff3\u002Fd7\u002Ff3d7c5d1fcde110164eb84ccddc6652712275e9c214a9725593c0630a6cffa4a.jpg",[41,44],{"alias_norm":42,"kind":43},"SCT011HU75G3","base",{"alias_norm":45,"kind":43},"SCT011HU75G3A",[],[48,52],{"name":49,"name_en":50,"path":51},"分立器件","Discretes","discrete",{"name":22,"name_en":23,"path":24},[],[55,58,61,64,67,69,71,74,76,80,84,87],{"pn_display":56,"pn_norm":56,"summary":57},"GANSPIN611","High-voltage half-bridge GaN motor driver",{"pn_display":59,"pn_norm":59,"summary":60},"MASTERGAN2","High power density 600V Half bridge driver with two enhancement mode GaN HEMT",{"pn_display":62,"pn_norm":62,"summary":63},"MASTERGAN4","High power density 600V half-bridge driver with two enhancement mode GaN HEMT",{"pn_display":65,"pn_norm":65,"summary":66},"STDRIVEG210","220 V high-speed half-bridge gate driver for GaN power switches",{"pn_display":68,"pn_norm":68,"summary":66},"STDRIVEG211",{"pn_display":70,"pn_norm":70,"summary":66},"STDRIVEG212",{"pn_display":72,"pn_norm":72,"summary":73},"STDRIVEG610","High voltage and high-speed half-bridge gate driver for GaN power switches",{"pn_display":75,"pn_norm":75,"summary":73},"STDRIVEG611",{"pn_display":77,"pn_norm":78,"summary":79},"A2F12M12W2-F1","A2F12M12W2F1","ACEPACK 2 power module, fourpack topology, 1200 V, 13 mΩ typ. SiC Power MOSFET gen.2 with NTC",{"pn_display":81,"pn_norm":82,"summary":83},"M2TP80M12W2-2LA","M2TP80M12W22LA","Automotive-grade ACEPACK DMT‑32 power module, 3-phase four wire PFC topology, 1200 V, 84 mΩ typ. SiC Power MOSFET with rectifier diode and NTC",{"pn_display":85,"pn_norm":85,"summary":86},"MASTERGAN6","650 V GaN half-bridge with gate driver and protections",{"pn_display":88,"pn_norm":88,"summary":89},"SCT018HU65G3AG","Automotive-grade silicon carbide Power MOSFET 650 V, 21.5 mΩ typ., 60 A in an HU3PAK package"]