[{"data":1,"prerenderedAt":-1},["ShallowReactive",2],{"part:st:MASTERGAN6":3},{"part":4,"mfr":19,"docs":25,"aliases":34,"alts":38,"breadcrumbs":39,"related":45,"more_from_mfr":67},{"id":5,"pn":6,"pn_norm":6,"series":7,"package":7,"lifecycle":8,"summary":9,"params":10,"features":14,"pins":7,"updated_at":15,"category_name":16,"category_name_en":17,"category_path":18},2218,"MASTERGAN6",null,"active","650 V GaN half-bridge with gate driver and protections",[11],[12,13],"工作温度","-40 ~ 125 °C",[],"2026-10-10T13:01:01.608Z","SiC \u002F GaN 宽禁带器件","SiC \u002F GaN Wide-Bandgap","discrete.sic",{"slug":20,"name_en":21,"name_cn":22,"website":23,"is_domestic":24},"st","STMicroelectronics","意法半导体","https:\u002F\u002Fwww.st.com",false,[26],{"id":5,"filename":27,"title":28,"pages":29,"size_bytes":30,"lang":7,"doc_version":7,"published_at":7,"role":31,"outline_count":32,"thumb":33},"ST-MASTERGAN6.pdf","Datasheet - MASTERGAN6 - 650 V GaN half-bridge with gate driver and protections",35,1899844,"datasheet",41,"\u002Fthumbs\u002F2e\u002F75\u002F2e759788bc16b4c51d5fefc0b2aecb13b50b2390352ed020ceb7b4d3746beea2.jpg",[35],{"alias_norm":36,"kind":37},"MASTERGAN6TR","order",[],[40,44],{"name":41,"name_en":42,"path":43},"分立器件","Discretes","discrete",{"name":16,"name_en":17,"path":18},[46,49,52,54,57,60,62,65],{"pn_display":47,"pn_norm":47,"package":7,"summary":48},"MASTERGAN1","High power density 600V Half bridge driver with two enhancement mode GaN HEMT",{"pn_display":50,"pn_norm":50,"package":7,"summary":51},"MASTERGAN1L","600 V half-bridge enhancement mode GaN HEMT with high voltage driver",{"pn_display":53,"pn_norm":53,"package":7,"summary":48},"MASTERGAN2",{"pn_display":55,"pn_norm":55,"package":7,"summary":56},"MASTERGAN3","High power density 600 V Half bridge driver with two enhancement mode GaNHEMT",{"pn_display":58,"pn_norm":58,"package":7,"summary":59},"MASTERGAN4","High power density 600V half-bridge driver with two enhancement mode GaN HEMT",{"pn_display":61,"pn_norm":61,"package":7,"summary":51},"MASTERGAN4L",{"pn_display":63,"pn_norm":63,"package":7,"summary":64},"MASTERGAN5","High power density 600 V half-bridge driver with two enhancement mode GaNHEMT",{"pn_display":66,"pn_norm":66,"package":7,"summary":9},"MASTERGAN7",[68,72,76,80,83,85,89,93],{"pn_display":69,"pn_norm":70,"summary":71},"A2F12M12W2-F1","A2F12M12W2F1","ACEPACK 2 power module, fourpack topology, 1200 V, 13 mΩ typ. SiC Power MOSFET gen.2 with NTC",{"pn_display":73,"pn_norm":74,"summary":75},"A2F20M65W3-FC","A2F20M65W3FC","ACEPACK 2 power module, fourpack topology, 650 V, 23 mΩ typ. SiC Power MOSFET gen.3 with NTC and capacitance",{"pn_display":77,"pn_norm":78,"summary":79},"A2U12M12W2-F1C","A2U12M12W2F1C","ACEPACK 2 power module, 3-level topology, 1200 V, 100 A based on SiC Power MOSFET",{"pn_display":81,"pn_norm":81,"summary":82},"GANSPIN611","High-voltage half-bridge GaN motor driver",{"pn_display":84,"pn_norm":84,"summary":82},"GANSPIN612",{"pn_display":86,"pn_norm":87,"summary":88},"M2P45M12W2-1LA","M2P45M12W21LA","Automotive‑grade ACEPACK DMT‑32 power module, sixpack topology, 1200 V, 47.5 mΩ typ. SiC Power MOSFET with NTC",{"pn_display":90,"pn_norm":91,"summary":92},"M2TP80M12W2-2LA","M2TP80M12W22LA","Automotive-grade ACEPACK DMT‑32 power module, 3-phase four wire PFC topology, 1200 V, 84 mΩ typ. SiC Power MOSFET with rectifier diode and NTC",{"pn_display":94,"pn_norm":94,"summary":95},"SCT011HU75G3AG","Automotive-grade silicon carbide Power MOSFET 750 V, 11.4 mΩ typ., 110 A in an HU3PAK package"]