[{"data":1,"prerenderedAt":-1},["ShallowReactive",2],{"part:st:MASTERGAN4L":3},{"part":4,"mfr":19,"docs":25,"aliases":34,"alts":41,"breadcrumbs":42,"related":48,"more_from_mfr":69},{"id":5,"pn":6,"pn_norm":6,"series":7,"package":7,"lifecycle":8,"summary":9,"params":10,"features":14,"pins":7,"updated_at":15,"category_name":16,"category_name_en":17,"category_path":18},2216,"MASTERGAN4L",null,"active","600 V half-bridge enhancement mode GaN HEMT with high voltage driver",[11],[12,13],"工作温度","-40 ~ 125 °C",[],"2026-10-10T13:01:01.608Z","SiC \u002F GaN 宽禁带器件","SiC \u002F GaN Wide-Bandgap","discrete.sic",{"slug":20,"name_en":21,"name_cn":22,"website":23,"is_domestic":24},"st","STMicroelectronics","意法半导体","https:\u002F\u002Fwww.st.com",false,[26],{"id":5,"filename":27,"title":28,"pages":29,"size_bytes":30,"lang":7,"doc_version":7,"published_at":7,"role":31,"outline_count":32,"thumb":33},"ST-MASTERGAN4L.pdf","Datasheet - MASTERGAN4L - 600 V half-bridge enhancement mode GaN HEMT with high voltage driver",26,1286395,"datasheet",31,"\u002Fthumbs\u002Ff8\u002F81\u002Ff8819388ffbae4275ae4aee08df3dc5ee8b905ca59fd661c973241c128c65a02.jpg",[35,38],{"alias_norm":36,"kind":37},"MASTERGAN4","base",{"alias_norm":39,"kind":40},"MASTERGAN4LTR","order",[],[43,47],{"name":44,"name_en":45,"path":46},"分立器件","Discretes","discrete",{"name":16,"name_en":17,"path":18},[49,52,54,56,59,61,64,67],{"pn_display":50,"pn_norm":50,"package":7,"summary":51},"MASTERGAN1","High power density 600V Half bridge driver with two enhancement mode GaN HEMT",{"pn_display":53,"pn_norm":53,"package":7,"summary":9},"MASTERGAN1L",{"pn_display":55,"pn_norm":55,"package":7,"summary":51},"MASTERGAN2",{"pn_display":57,"pn_norm":57,"package":7,"summary":58},"MASTERGAN3","High power density 600 V Half bridge driver with two enhancement mode GaNHEMT",{"pn_display":36,"pn_norm":36,"package":7,"summary":60},"High power density 600V half-bridge driver with two enhancement mode GaN HEMT",{"pn_display":62,"pn_norm":62,"package":7,"summary":63},"MASTERGAN5","High power density 600 V half-bridge driver with two enhancement mode GaNHEMT",{"pn_display":65,"pn_norm":65,"package":7,"summary":66},"MASTERGAN6","650 V GaN half-bridge with gate driver and protections",{"pn_display":68,"pn_norm":68,"package":7,"summary":66},"MASTERGAN7",[70,73,77,80,84,88,92,96,99,101,105],{"pn_display":71,"pn_norm":71,"summary":72},"STPSC40G12","1200 V, 40 A power Schottky high surge silicon carbide diode",{"pn_display":74,"pn_norm":75,"summary":76},"STPSC40G12-Y","STPSC40G12Y","Automotive 1200 V, 40 A power Schottky high surge silicon carbide diode",{"pn_display":78,"pn_norm":78,"summary":79},"STPSC4H065","650 V, 4 A high surge silicon carbide power Schottky diode",{"pn_display":81,"pn_norm":82,"summary":83},"A2F12M12W2-F1","A2F12M12W2F1","ACEPACK 2 power module, fourpack topology, 1200 V, 13 mΩ typ. SiC Power MOSFET gen.2 with NTC",{"pn_display":85,"pn_norm":86,"summary":87},"A2F20M65W3-FC","A2F20M65W3FC","ACEPACK 2 power module, fourpack topology, 650 V, 23 mΩ typ. SiC Power MOSFET gen.3 with NTC and capacitance",{"pn_display":89,"pn_norm":90,"summary":91},"A2U12M12W2-F1C","A2U12M12W2F1C","ACEPACK 2 power module, 3-level topology, 1200 V, 100 A based on SiC Power MOSFET",{"pn_display":93,"pn_norm":94,"summary":95},"A2U12M12W2-F2","A2U12M12W2F2","ACEPACK 2 power module, 3‑level topology, 1200 V, 13 mΩ typ. SiC Power MOSFET gen.2 with NTC",{"pn_display":97,"pn_norm":97,"summary":98},"GANSPIN611","High-voltage half-bridge GaN motor driver",{"pn_display":100,"pn_norm":100,"summary":98},"GANSPIN612",{"pn_display":102,"pn_norm":103,"summary":104},"M2P45M12W2-1LA","M2P45M12W21LA","Automotive‑grade ACEPACK DMT‑32 power module, sixpack topology, 1200 V, 47.5 mΩ typ. SiC Power MOSFET with NTC",{"pn_display":106,"pn_norm":107,"summary":108},"M2TP80M12W2-2LA","M2TP80M12W22LA","Automotive-grade ACEPACK DMT‑32 power module, 3-phase four wire PFC topology, 1200 V, 84 mΩ typ. SiC Power MOSFET with rectifier diode and NTC"]