[{"data":1,"prerenderedAt":-1},["ShallowReactive",2],{"part:st:MASTERGAN1L":3},{"part":4,"mfr":19,"docs":25,"aliases":34,"alts":41,"breadcrumbs":42,"related":48,"more_from_mfr":69},{"id":5,"pn":6,"pn_norm":6,"series":7,"package":7,"lifecycle":8,"summary":9,"params":10,"features":14,"pins":7,"updated_at":15,"category_name":16,"category_name_en":17,"category_path":18},2212,"MASTERGAN1L",null,"active","600 V half-bridge enhancement mode GaN HEMT with high voltage driver",[11],[12,13],"工作温度","-40 ~ 125 °C",[],"2026-10-10T13:01:01.608Z","SiC \u002F GaN 宽禁带器件","SiC \u002F GaN Wide-Bandgap","discrete.sic",{"slug":20,"name_en":21,"name_cn":22,"website":23,"is_domestic":24},"st","STMicroelectronics","意法半导体","https:\u002F\u002Fwww.st.com",false,[26],{"id":5,"filename":27,"title":28,"pages":29,"size_bytes":30,"lang":7,"doc_version":7,"published_at":7,"role":31,"outline_count":32,"thumb":33},"ST-MASTERGAN1L.pdf","Datasheet - MASTERGAN1L - 600 V half-bridge enhancement mode GaN HEMT with high voltage driver",26,1287149,"datasheet",31,"\u002Fthumbs\u002F13\u002F83\u002F13839bf07cbab6ba6e118d45f5c4dbf1804d61a319c8238e3bdb411f42cd9348.jpg",[35,38],{"alias_norm":36,"kind":37},"MASTERGAN1","base",{"alias_norm":39,"kind":40},"MASTERGAN1LTR","order",[],[43,47],{"name":44,"name_en":45,"path":46},"分立器件","Discretes","discrete",{"name":16,"name_en":17,"path":18},[49,51,53,56,59,61,64,67],{"pn_display":36,"pn_norm":36,"package":7,"summary":50},"High power density 600V Half bridge driver with two enhancement mode GaN HEMT",{"pn_display":52,"pn_norm":52,"package":7,"summary":50},"MASTERGAN2",{"pn_display":54,"pn_norm":54,"package":7,"summary":55},"MASTERGAN3","High power density 600 V Half bridge driver with two enhancement mode GaNHEMT",{"pn_display":57,"pn_norm":57,"package":7,"summary":58},"MASTERGAN4","High power density 600V half-bridge driver with two enhancement mode GaN HEMT",{"pn_display":60,"pn_norm":60,"package":7,"summary":9},"MASTERGAN4L",{"pn_display":62,"pn_norm":62,"package":7,"summary":63},"MASTERGAN5","High power density 600 V half-bridge driver with two enhancement mode GaNHEMT",{"pn_display":65,"pn_norm":65,"package":7,"summary":66},"MASTERGAN6","650 V GaN half-bridge with gate driver and protections",{"pn_display":68,"pn_norm":68,"package":7,"summary":66},"MASTERGAN7",[70,74,77,79,83,86,90,94,97],{"pn_display":71,"pn_norm":72,"summary":73},"A2F12M12W2-F1","A2F12M12W2F1","ACEPACK 2 power module, fourpack topology, 1200 V, 13 mΩ typ. SiC Power MOSFET gen.2 with NTC",{"pn_display":75,"pn_norm":75,"summary":76},"GANSPIN611","High-voltage half-bridge GaN motor driver",{"pn_display":78,"pn_norm":78,"summary":76},"GANSPIN612",{"pn_display":80,"pn_norm":81,"summary":82},"M2P45M12W2-1LA","M2P45M12W21LA","Automotive‑grade ACEPACK DMT‑32 power module, sixpack topology, 1200 V, 47.5 mΩ typ. SiC Power MOSFET with NTC",{"pn_display":84,"pn_norm":84,"summary":85},"SCT011HU75G3AG","Automotive-grade silicon carbide Power MOSFET 750 V, 11.4 mΩ typ., 110 A in an HU3PAK package",{"pn_display":87,"pn_norm":88,"summary":89},"SCT012W90G3-4AG","SCT012W90G34AG","Automotive-grade silicon carbide Power MOSFET 900 V, 12 mΩ typ., 110 A in an HiP247-4 package",{"pn_display":91,"pn_norm":92,"summary":93},"SCT018H65G3-7","SCT018H65G37","Silicon carbide Power MOSFET 650 V, 20 mΩ typ., 55 A in an H²PAK-7 package",{"pn_display":95,"pn_norm":95,"summary":96},"SCT025W120G3AG","Automotive-grade silicon carbide Power MOSFET 1200 V, 27 mΩ typ., 56 A in an HiP247 package",{"pn_display":98,"pn_norm":98,"summary":99},"SCT040W120G3AG","Automotive-grade silicon carbide Power MOSFET 1200 V, 40 mΩ typ., 40 A in an HiP247 package"]