[{"data":1,"prerenderedAt":-1},["ShallowReactive",2],{"part:st:MASTERGAN1":3},{"part":4,"mfr":19,"docs":25,"aliases":34,"alts":38,"breadcrumbs":39,"related":45,"more_from_mfr":67},{"id":5,"pn":6,"pn_norm":6,"series":7,"package":7,"lifecycle":8,"summary":9,"params":10,"features":14,"pins":7,"updated_at":15,"category_name":16,"category_name_en":17,"category_path":18},2211,"MASTERGAN1",null,"active","High power density 600V Half bridge driver with two enhancement mode GaN HEMT",[11],[12,13],"工作温度","-40 ~ 125 °C",[],"2026-10-10T13:01:01.608Z","SiC \u002F GaN 宽禁带器件","SiC \u002F GaN Wide-Bandgap","discrete.sic",{"slug":20,"name_en":21,"name_cn":22,"website":23,"is_domestic":24},"st","STMicroelectronics","意法半导体","https:\u002F\u002Fwww.st.com",false,[26],{"id":5,"filename":27,"title":28,"pages":29,"size_bytes":30,"lang":7,"doc_version":7,"published_at":7,"role":31,"outline_count":32,"thumb":33},"ST-MASTERGAN1.pdf","Datasheet - MASTERGAN1 - High power density 600V Half bridge driver with two enhancement mode GaN HEMT",27,537524,"datasheet",31,"\u002Fthumbs\u002F46\u002Fe6\u002F46e6bb78e90483d5a21e564c9d50d467ea4fb3ecbed499cc2f01c810a03af255.jpg",[35],{"alias_norm":36,"kind":37},"MASTERGAN1TR","order",[],[40,44],{"name":41,"name_en":42,"path":43},"分立器件","Discretes","discrete",{"name":16,"name_en":17,"path":18},[46,49,51,54,57,59,62,65],{"pn_display":47,"pn_norm":47,"package":7,"summary":48},"MASTERGAN1L","600 V half-bridge enhancement mode GaN HEMT with high voltage driver",{"pn_display":50,"pn_norm":50,"package":7,"summary":9},"MASTERGAN2",{"pn_display":52,"pn_norm":52,"package":7,"summary":53},"MASTERGAN3","High power density 600 V Half bridge driver with two enhancement mode GaNHEMT",{"pn_display":55,"pn_norm":55,"package":7,"summary":56},"MASTERGAN4","High power density 600V half-bridge driver with two enhancement mode GaN HEMT",{"pn_display":58,"pn_norm":58,"package":7,"summary":48},"MASTERGAN4L",{"pn_display":60,"pn_norm":60,"package":7,"summary":61},"MASTERGAN5","High power density 600 V half-bridge driver with two enhancement mode GaNHEMT",{"pn_display":63,"pn_norm":63,"package":7,"summary":64},"MASTERGAN6","650 V GaN half-bridge with gate driver and protections",{"pn_display":66,"pn_norm":66,"package":7,"summary":64},"MASTERGAN7",[68,71,75,79,83,87,90,92,96],{"pn_display":69,"pn_norm":69,"summary":70},"STPSC4H065","650 V, 4 A high surge silicon carbide power Schottky diode",{"pn_display":72,"pn_norm":73,"summary":74},"A2F12M12W2-F1","A2F12M12W2F1","ACEPACK 2 power module, fourpack topology, 1200 V, 13 mΩ typ. SiC Power MOSFET gen.2 with NTC",{"pn_display":76,"pn_norm":77,"summary":78},"A2F20M65W3-FC","A2F20M65W3FC","ACEPACK 2 power module, fourpack topology, 650 V, 23 mΩ typ. SiC Power MOSFET gen.3 with NTC and capacitance",{"pn_display":80,"pn_norm":81,"summary":82},"A2U12M12W2-F1C","A2U12M12W2F1C","ACEPACK 2 power module, 3-level topology, 1200 V, 100 A based on SiC Power MOSFET",{"pn_display":84,"pn_norm":85,"summary":86},"A2U12M12W2-F2","A2U12M12W2F2","ACEPACK 2 power module, 3‑level topology, 1200 V, 13 mΩ typ. SiC Power MOSFET gen.2 with NTC",{"pn_display":88,"pn_norm":88,"summary":89},"GANSPIN611","High-voltage half-bridge GaN motor driver",{"pn_display":91,"pn_norm":91,"summary":89},"GANSPIN612",{"pn_display":93,"pn_norm":94,"summary":95},"M2P45M12W2-1LA","M2P45M12W21LA","Automotive‑grade ACEPACK DMT‑32 power module, sixpack topology, 1200 V, 47.5 mΩ typ. SiC Power MOSFET with NTC",{"pn_display":97,"pn_norm":98,"summary":99},"M2TP80M12W2-2LA","M2TP80M12W22LA","Automotive-grade ACEPACK DMT‑32 power module, 3-phase four wire PFC topology, 1200 V, 84 mΩ typ. SiC Power MOSFET with rectifier diode and NTC"]