[{"data":1,"prerenderedAt":-1},["ShallowReactive",2],{"part:st:M2TP80M12W22LA":3},{"part":4,"mfr":23,"docs":29,"aliases":38,"alts":44,"breadcrumbs":45,"related":51,"more_from_mfr":52},{"id":5,"pn":6,"pn_norm":7,"series":8,"package":9,"lifecycle":10,"summary":11,"params":12,"features":18,"pins":8,"updated_at":19,"category_name":20,"category_name_en":21,"category_path":22},2006,"M2TP80M12W2-2LA","M2TP80M12W22LA",null,"ACEPACK","active","Automotive-grade ACEPACK DMT‑32 power module, 3-phase four wire PFC topology, 1200 V, 84 mΩ typ. SiC Power MOSFET with rectifier diode and NTC",[13,16],[14,15],"RDS(on)","84 mΩ",[17,9],"封装",[],"2026-10-10T13:01:01.608Z","SiC \u002F GaN 宽禁带器件","SiC \u002F GaN Wide-Bandgap","discrete.sic",{"slug":24,"name_en":25,"name_cn":26,"website":27,"is_domestic":28},"st","STMicroelectronics","意法半导体","https:\u002F\u002Fwww.st.com",false,[30],{"id":5,"filename":31,"title":32,"pages":33,"size_bytes":34,"lang":8,"doc_version":8,"published_at":8,"role":35,"outline_count":36,"thumb":37},"ST-M2TP80M12W22LA.pdf","Datasheet - M2TP80M12W2-2LA - Automotive-grade ACEPACK DMT‑32 power module, 3-phase four wire PFC topology, 1200 V, 84 mΩ typ. SiC Power MOSFET with rectifier diode and NTC",14,986272,"datasheet",10,"\u002Fthumbs\u002Fa0\u002F1c\u002Fa01cafeae844ba923d456029c52e20ed718fd005382aa5fd0de5d0bc5a727a21.jpg",[39,42],{"alias_norm":40,"kind":41},"M2TP80M12W22","base",{"alias_norm":43,"kind":41},"M2TP80M12W22L",[],[46,50],{"name":47,"name_en":48,"path":49},"分立器件","Discretes","discrete",{"name":20,"name_en":21,"path":22},[],[53,56,60,64,67,69,73,76,79,81,84,88],{"pn_display":54,"pn_norm":54,"summary":55},"MASTERGAN4","High power density 600V half-bridge driver with two enhancement mode GaN HEMT",{"pn_display":57,"pn_norm":58,"summary":59},"A2F12M12W2-F1","A2F12M12W2F1","ACEPACK 2 power module, fourpack topology, 1200 V, 13 mΩ typ. SiC Power MOSFET gen.2 with NTC",{"pn_display":61,"pn_norm":62,"summary":63},"A2U12M12W2-F1C","A2U12M12W2F1C","ACEPACK 2 power module, 3-level topology, 1200 V, 100 A based on SiC Power MOSFET",{"pn_display":65,"pn_norm":65,"summary":66},"GANSPIN611","High-voltage half-bridge GaN motor driver",{"pn_display":68,"pn_norm":68,"summary":66},"GANSPIN612",{"pn_display":70,"pn_norm":71,"summary":72},"M2P45M12W2-1LA","M2P45M12W21LA","Automotive‑grade ACEPACK DMT‑32 power module, sixpack topology, 1200 V, 47.5 mΩ typ. SiC Power MOSFET with NTC",{"pn_display":74,"pn_norm":74,"summary":75},"MASTERGAN1L","600 V half-bridge enhancement mode GaN HEMT with high voltage driver",{"pn_display":77,"pn_norm":77,"summary":78},"MASTERGAN2","High power density 600V Half bridge driver with two enhancement mode GaN HEMT",{"pn_display":80,"pn_norm":80,"summary":75},"MASTERGAN4L",{"pn_display":82,"pn_norm":82,"summary":83},"SCT011HU75G3AG","Automotive-grade silicon carbide Power MOSFET 750 V, 11.4 mΩ typ., 110 A in an HU3PAK package",{"pn_display":85,"pn_norm":86,"summary":87},"SCT012W90G3-4AG","SCT012W90G34AG","Automotive-grade silicon carbide Power MOSFET 900 V, 12 mΩ typ., 110 A in an HiP247-4 package",{"pn_display":89,"pn_norm":90,"summary":91},"SCT018H65G3-7","SCT018H65G37","Silicon carbide Power MOSFET 650 V, 20 mΩ typ., 55 A in an H²PAK-7 package"]