[{"data":1,"prerenderedAt":-1},["ShallowReactive",2],{"part:st:M2P45M12W21LA":3},{"part":4,"mfr":23,"docs":29,"aliases":38,"alts":44,"breadcrumbs":45,"related":51,"more_from_mfr":52},{"id":5,"pn":6,"pn_norm":7,"series":8,"package":9,"lifecycle":10,"summary":11,"params":12,"features":18,"pins":8,"updated_at":19,"category_name":20,"category_name_en":21,"category_path":22},2005,"M2P45M12W2-1LA","M2P45M12W21LA",null,"ACEPACK","active","Automotive‑grade ACEPACK DMT‑32 power module, sixpack topology, 1200 V, 47.5 mΩ typ. SiC Power MOSFET with NTC",[13,16],[14,15],"RDS(on)","47.5 mΩ",[17,9],"封装",[],"2026-10-10T13:01:01.608Z","SiC \u002F GaN 宽禁带器件","SiC \u002F GaN Wide-Bandgap","discrete.sic",{"slug":24,"name_en":25,"name_cn":26,"website":27,"is_domestic":28},"st","STMicroelectronics","意法半导体","https:\u002F\u002Fwww.st.com",false,[30],{"id":5,"filename":31,"title":32,"pages":33,"size_bytes":34,"lang":8,"doc_version":8,"published_at":8,"role":35,"outline_count":36,"thumb":37},"ST-M2P45M12W21LA.pdf","Datasheet - M2P45M12W2-1LA - Automotive‑grade ACEPACK DMT‑32 power module, sixpack topology, 1200 V, 47.5 mΩ typ. SiC Power MOSFET with NTC",14,929434,"datasheet",8,"\u002Fthumbs\u002F73\u002Fca\u002F73cacc876f94c651bb5d2825b33f51bd80a45676145ebde93fa2bebe3bfe6b90.jpg",[39,42],{"alias_norm":40,"kind":41},"M2P45M12W21","base",{"alias_norm":43,"kind":41},"M2P45M12W21L",[],[46,50],{"name":47,"name_en":48,"path":49},"分立器件","Discretes","discrete",{"name":20,"name_en":21,"path":22},[],[53,57,60,62,65,68,71,74,77,80,83,85],{"pn_display":54,"pn_norm":55,"summary":56},"A2F12M12W2-F1","A2F12M12W2F1","ACEPACK 2 power module, fourpack topology, 1200 V, 13 mΩ typ. SiC Power MOSFET gen.2 with NTC",{"pn_display":58,"pn_norm":58,"summary":59},"GANSPIN611","High-voltage half-bridge GaN motor driver",{"pn_display":61,"pn_norm":61,"summary":59},"GANSPIN612",{"pn_display":63,"pn_norm":63,"summary":64},"MASTERGAN2","High power density 600V Half bridge driver with two enhancement mode GaN HEMT",{"pn_display":66,"pn_norm":66,"summary":67},"MASTERGAN4","High power density 600V half-bridge driver with two enhancement mode GaN HEMT",{"pn_display":69,"pn_norm":69,"summary":70},"MASTERGAN4L","600 V half-bridge enhancement mode GaN HEMT with high voltage driver",{"pn_display":72,"pn_norm":72,"summary":73},"SCT011HU75G3AG","Automotive-grade silicon carbide Power MOSFET 750 V, 11.4 mΩ typ., 110 A in an HU3PAK package",{"pn_display":75,"pn_norm":75,"summary":76},"SCT025W120G3AG","Automotive-grade silicon carbide Power MOSFET 1200 V, 27 mΩ typ., 56 A in an HiP247 package",{"pn_display":78,"pn_norm":78,"summary":79},"SCT040W120G3AG","Automotive-grade silicon carbide Power MOSFET 1200 V, 40 mΩ typ., 40 A in an HiP247 package",{"pn_display":81,"pn_norm":81,"summary":82},"STDRIVEG210","220 V high-speed half-bridge gate driver for GaN power switches",{"pn_display":84,"pn_norm":84,"summary":82},"STDRIVEG211",{"pn_display":86,"pn_norm":86,"summary":82},"STDRIVEG212"]