[{"data":1,"prerenderedAt":-1},["ShallowReactive",2],{"part:st:A2TBH45M65W3FC":3},{"part":4,"mfr":23,"docs":29,"aliases":38,"alts":44,"breadcrumbs":45,"related":51,"more_from_mfr":52},{"id":5,"pn":6,"pn_norm":7,"series":8,"package":9,"lifecycle":10,"summary":11,"params":12,"features":18,"pins":8,"updated_at":19,"category_name":20,"category_name_en":21,"category_path":22},698,"A2TBH45M65W3-FC","A2TBH45M65W3FC",null,"ACEPACK2","active","ACEPACK 2 power module, triple boost (650 V, 49 mΩ typ.) plus half-bridge topology (650 V, 23.5 mΩ typ.) SiC Power MOSFET gen. 3 with NTC and capacitance",[13,16],[14,15],"RDS(on)","49 mΩ",[17,9],"封装",[],"2026-10-10T13:01:01.608Z","SiC \u002F GaN 宽禁带器件","SiC \u002F GaN Wide-Bandgap","discrete.sic",{"slug":24,"name_en":25,"name_cn":26,"website":27,"is_domestic":28},"st","STMicroelectronics","意法半导体","https:\u002F\u002Fwww.st.com",false,[30],{"id":5,"filename":31,"title":32,"pages":33,"size_bytes":34,"lang":8,"doc_version":8,"published_at":8,"role":35,"outline_count":36,"thumb":37},"ST-A2TBH45M65W3FC.pdf","Datasheet - A2TBH45M65W3-FC - ACEPACK 2 power module, triple boost (650 V, 49 mΩ typ.) plus half-bridge topology (650 V, 23.5 mΩ typ.) SiC Power MOSFET gen. 3 with NTC and capacitance",21,986796,"datasheet",16,"\u002Fthumbs\u002Fd7\u002F8e\u002Fd78eeb91633c7f49e0a48f9d4d60c6e6b0b7d5a118e6765ba04096f57169d166.jpg",[39,42],{"alias_norm":40,"kind":41},"A2TBH45M65W3","base",{"alias_norm":43,"kind":41},"A2TBH45M65W3F",[],[46,50],{"name":47,"name_en":48,"path":49},"分立器件","Discretes","discrete",{"name":20,"name_en":21,"path":22},[],[53,56,59,62,66,69,73,77,81,85,88,90],{"pn_display":54,"pn_norm":54,"summary":55},"MASTERGAN4","High power density 600V half-bridge driver with two enhancement mode GaN HEMT",{"pn_display":57,"pn_norm":57,"summary":58},"MASTERGAN4L","600 V half-bridge enhancement mode GaN HEMT with high voltage driver",{"pn_display":60,"pn_norm":60,"summary":61},"STPSC40G12","1200 V, 40 A power Schottky high surge silicon carbide diode",{"pn_display":63,"pn_norm":64,"summary":65},"STPSC40G12-Y","STPSC40G12Y","Automotive 1200 V, 40 A power Schottky high surge silicon carbide diode",{"pn_display":67,"pn_norm":67,"summary":68},"STPSC4H065","650 V, 4 A high surge silicon carbide power Schottky diode",{"pn_display":70,"pn_norm":71,"summary":72},"A2F12M12W2-F1","A2F12M12W2F1","ACEPACK 2 power module, fourpack topology, 1200 V, 13 mΩ typ. SiC Power MOSFET gen.2 with NTC",{"pn_display":74,"pn_norm":75,"summary":76},"A2F20M65W3-FC","A2F20M65W3FC","ACEPACK 2 power module, fourpack topology, 650 V, 23 mΩ typ. SiC Power MOSFET gen.3 with NTC and capacitance",{"pn_display":78,"pn_norm":79,"summary":80},"A2U12M12W2-F1C","A2U12M12W2F1C","ACEPACK 2 power module, 3-level topology, 1200 V, 100 A based on SiC Power MOSFET",{"pn_display":82,"pn_norm":83,"summary":84},"A2U12M12W2-F2","A2U12M12W2F2","ACEPACK 2 power module, 3‑level topology, 1200 V, 13 mΩ typ. SiC Power MOSFET gen.2 with NTC",{"pn_display":86,"pn_norm":86,"summary":87},"GANSPIN611","High-voltage half-bridge GaN motor driver",{"pn_display":89,"pn_norm":89,"summary":87},"GANSPIN612",{"pn_display":91,"pn_norm":92,"summary":93},"M2P45M12W2-1LA","M2P45M12W21LA","Automotive‑grade ACEPACK DMT‑32 power module, sixpack topology, 1200 V, 47.5 mΩ typ. SiC Power MOSFET with NTC"]