[{"data":1,"prerenderedAt":-1},["ShallowReactive",2],{"part:st:A2F12M12W2F1":3},{"part":4,"mfr":23,"docs":29,"aliases":38,"alts":39,"breadcrumbs":40,"related":46,"more_from_mfr":47},{"id":5,"pn":6,"pn_norm":7,"series":8,"package":9,"lifecycle":10,"summary":11,"params":12,"features":18,"pins":8,"updated_at":19,"category_name":20,"category_name_en":21,"category_path":22},694,"A2F12M12W2-F1","A2F12M12W2F1",null,"ACEPACK2","active","ACEPACK 2 power module, fourpack topology, 1200 V, 13 mΩ typ. SiC Power MOSFET gen.2 with NTC",[13,16],[14,15],"RDS(on)","13 mΩ",[17,9],"封装",[],"2026-10-10T13:01:01.608Z","SiC \u002F GaN 宽禁带器件","SiC \u002F GaN Wide-Bandgap","discrete.sic",{"slug":24,"name_en":25,"name_cn":26,"website":27,"is_domestic":28},"st","STMicroelectronics","意法半导体","https:\u002F\u002Fwww.st.com",false,[30],{"id":5,"filename":31,"title":32,"pages":33,"size_bytes":34,"lang":8,"doc_version":8,"published_at":8,"role":35,"outline_count":36,"thumb":37},"ST-A2F12M12W2F1.pdf","Datasheet - A2F12M12W2-F1 - ACEPACK 2 power module, fourpack topology, 1200 V, 13 mΩ typ. SiC Power MOSFET gen.2 with NTC",15,564051,"datasheet",9,"\u002Fthumbs\u002F90\u002F57\u002F90576c1979b469bb847365660ef79ac0363ca43e14c76bde5f8479774d3508bb.jpg",[],[],[41,45],{"name":42,"name_en":43,"path":44},"分立器件","Discretes","discrete",{"name":20,"name_en":21,"path":22},[],[48,51,53,56,59,62,65,68,71,74,76,78],{"pn_display":49,"pn_norm":49,"summary":50},"GANSPIN611","High-voltage half-bridge GaN motor driver",{"pn_display":52,"pn_norm":52,"summary":50},"GANSPIN612",{"pn_display":54,"pn_norm":54,"summary":55},"MASTERGAN2","High power density 600V Half bridge driver with two enhancement mode GaN HEMT",{"pn_display":57,"pn_norm":57,"summary":58},"MASTERGAN4","High power density 600V half-bridge driver with two enhancement mode GaN HEMT",{"pn_display":60,"pn_norm":60,"summary":61},"MASTERGAN4L","600 V half-bridge enhancement mode GaN HEMT with high voltage driver",{"pn_display":63,"pn_norm":63,"summary":64},"SCT011HU75G3AG","Automotive-grade silicon carbide Power MOSFET 750 V, 11.4 mΩ typ., 110 A in an HU3PAK package",{"pn_display":66,"pn_norm":66,"summary":67},"SCT025W120G3AG","Automotive-grade silicon carbide Power MOSFET 1200 V, 27 mΩ typ., 56 A in an HiP247 package",{"pn_display":69,"pn_norm":69,"summary":70},"SCT040W120G3AG","Automotive-grade silicon carbide Power MOSFET 1200 V, 40 mΩ typ., 40 A in an HiP247 package",{"pn_display":72,"pn_norm":72,"summary":73},"STDRIVEG210","220 V high-speed half-bridge gate driver for GaN power switches",{"pn_display":75,"pn_norm":75,"summary":73},"STDRIVEG211",{"pn_display":77,"pn_norm":77,"summary":73},"STDRIVEG212",{"pn_display":79,"pn_norm":79,"summary":80},"STDRIVEG600","High voltage half-bridge gate driver for GaN transistors"]