[{"data":1,"prerenderedAt":-1},["ShallowReactive",2],{"part:onsemi:UF4C120053B7S":3},{"part":4,"mfr":22,"docs":27,"aliases":36,"alts":40,"breadcrumbs":41,"related":47,"more_from_mfr":56},{"id":5,"pn":6,"pn_norm":6,"series":7,"package":8,"lifecycle":9,"summary":10,"params":11,"features":17,"pins":7,"updated_at":18,"category_name":19,"category_name_en":20,"category_path":21},11046,"UF4C120053B7S",null,"TO-263-7","active","Silicon Carbide (SiC) Cascode JFET – EliteSiC, Power N‐Channel, TO‐263‐7, 1200 V, 53 mohm",[12,15],[13,14],"RDS(on)","53 mΩ",[16,8],"封装",[],"2026-10-10T13:01:01.608Z","SiC \u002F GaN 宽禁带器件","SiC \u002F GaN Wide-Bandgap","discrete.sic",{"slug":23,"name_en":23,"name_cn":24,"website":25,"is_domestic":26},"onsemi","安森美","https:\u002F\u002Fwww.onsemi.com",false,[28],{"id":5,"filename":29,"title":30,"pages":31,"size_bytes":32,"lang":7,"doc_version":7,"published_at":7,"role":33,"outline_count":34,"thumb":35},"ONSEMI-UF4C120053B7S.pdf","UF4C120053B7S -Silicon Carbide (SiC) Cascode JFET – EliteSiC, Power N‐Channel, TO‐263‐7, 1200 V, 53 mohm",11,672222,"datasheet",0,"\u002Fthumbs\u002F1a\u002F48\u002F1a48ff1abbbedc5efd0de94a9c8f581d0f0d871f50fa87d78e87eba0848f0b8e.jpg",[37],{"alias_norm":38,"kind":39},"UF4C120053B7","base",[],[42,46],{"name":43,"name_en":44,"path":45},"分立器件","Discretes","discrete",{"name":19,"name_en":20,"path":21},[48,52],{"pn_display":49,"pn_norm":49,"package":50,"summary":51},"UF4C120053K3S","TO247-3","Silicon Carbide (SiC) Cascode JFET - EliteSiC, Power N-Channel, TO247-3, 1200 V, 53 mohm",{"pn_display":53,"pn_norm":53,"package":54,"summary":55},"UF4C120053K4S","TO247","Silicon Carbide (SiC) Cascode JFET – EliteSiC, Power N-Channel, TO247‐4, 1200 V, 53 mohm",[57,60,63,66,69,72,75,79,83,86,89,92],{"pn_display":58,"pn_norm":58,"summary":59},"NDSH10170A","Silicon Carbide (SiC) Schottky Diode – EliteSiC, 10 A, 1700 V, D1, TO-247-2L",{"pn_display":61,"pn_norm":61,"summary":62},"NVT2012N065M3S","Silicon Carbide (SiC) MOSFET – EliteSiC, 12.7 mohm, 650 V, M3S, T2PAK",{"pn_display":64,"pn_norm":64,"summary":65},"NCP58920","Enhanced Mode GaN Power Switch with Integrated Driver 650 V, 150 mΩ, 11 A, TQFN26",{"pn_display":67,"pn_norm":67,"summary":68},"NDC25170A","Silicon Carbide (SiC) Schottky Diode – EliteSiC, 25 A, 1700 V, D1, Die",{"pn_display":70,"pn_norm":70,"summary":71},"NDSH20120C","Silicon Carbide (SiC) Schottky Diode – EliteSiC, 20 A, 1200 V, D3, TO-247-2L",{"pn_display":73,"pn_norm":73,"summary":74},"NDSH25170A","Silicon Carbide (SiC) Schottky Diode – EliteSiC, 25 A, 1700 V, D1, TO-247-2L",{"pn_display":76,"pn_norm":77,"summary":78},"NDSH30120C-F155","NDSH30120CF155","Silicon Carbide (SiC) Schottky Diode – EliteSiC, 30 A, 1200 V, D3, TO-247-2L",{"pn_display":80,"pn_norm":81,"summary":82},"NDSH50120C-F155","NDSH50120CF155","Silicon Carbide (SiC) Schottky Diode – EliteSiC, 50 A, 1200 V, D3, TO-247-2L",{"pn_display":84,"pn_norm":84,"summary":85},"NVBG045N065SC1","Silicon Carbide (SiC) MOSFET – 31 mohm, 650 V, M2, D2PAK-71",{"pn_display":87,"pn_norm":87,"summary":88},"NVBG060N090SC1","Silicon Carbide (SiC) MOSFET – 60 mohm, 900 V, M2, D2PAK-7L",{"pn_display":90,"pn_norm":90,"summary":91},"NVBG075N065SC1","Silicon Carbide (SiC) MOSFET - 56 mohm, 650 V, M2, D2PAK-7L",{"pn_display":93,"pn_norm":93,"summary":94},"NVH4L015N065SC1","Silicon Carbide (SiC) MOSFET – 12 mohm, 650 V, M2, TO-247-4L"]