[{"data":1,"prerenderedAt":-1},["ShallowReactive",2],{"part:onsemi:NVT2012N065M3S":3},{"part":4,"mfr":19,"docs":24,"aliases":33,"alts":37,"breadcrumbs":38,"related":44,"more_from_mfr":48},{"id":5,"pn":6,"pn_norm":6,"series":7,"package":7,"lifecycle":8,"summary":9,"params":10,"features":14,"pins":7,"updated_at":15,"category_name":16,"category_name_en":17,"category_path":18},10240,"NVT2012N065M3S",null,"active","Silicon Carbide (SiC) MOSFET – EliteSiC, 12.7 mohm, 650 V, M3S, T2PAK",[11],[12,13],"RDS(on)","12.7 mΩ",[],"2026-10-10T13:01:01.608Z","SiC \u002F GaN 宽禁带器件","SiC \u002F GaN Wide-Bandgap","discrete.sic",{"slug":20,"name_en":20,"name_cn":21,"website":22,"is_domestic":23},"onsemi","安森美","https:\u002F\u002Fwww.onsemi.com",false,[25],{"id":5,"filename":26,"title":27,"pages":28,"size_bytes":29,"lang":7,"doc_version":7,"published_at":7,"role":30,"outline_count":31,"thumb":32},"ONSEMI-NVT2012N065M3S.pdf","NVT2012N065M3S - Silicon Carbide (SiC) MOSFET – EliteSiC, 12.7 mohm, 650 V, M3S, T2PAK",10,395084,"datasheet",0,"\u002Fthumbs\u002F61\u002Fbd\u002F61bde5eae35fa8084b2449e32c01f74d68e29a866fc9334dad50e03d8d498ca4.jpg",[34],{"alias_norm":35,"kind":36},"NVT2012N065M3","base",[],[39,43],{"name":40,"name_en":41,"path":42},"分立器件","Discretes","discrete",{"name":16,"name_en":17,"path":18},[45],{"pn_display":46,"pn_norm":46,"package":7,"summary":47},"NVT2012N065M2","MOSFET - SiC Power, Single N-Channel, T2PAK",[49,52,55,58,62,65,68,71,74,77,80,83],{"pn_display":50,"pn_norm":50,"summary":51},"NDSH10170A","Silicon Carbide (SiC) Schottky Diode – EliteSiC, 10 A, 1700 V, D1, TO-247-2L",{"pn_display":53,"pn_norm":53,"summary":54},"NDSH20120C","Silicon Carbide (SiC) Schottky Diode – EliteSiC, 20 A, 1200 V, D3, TO-247-2L",{"pn_display":56,"pn_norm":56,"summary":57},"NDSH25170A","Silicon Carbide (SiC) Schottky Diode – EliteSiC, 25 A, 1700 V, D1, TO-247-2L",{"pn_display":59,"pn_norm":60,"summary":61},"NDSH50120C-F155","NDSH50120CF155","Silicon Carbide (SiC) Schottky Diode – EliteSiC, 50 A, 1200 V, D3, TO-247-2L",{"pn_display":63,"pn_norm":63,"summary":64},"NVBG060N090SC1","Silicon Carbide (SiC) MOSFET – 60 mohm, 900 V, M2, D2PAK-7L",{"pn_display":66,"pn_norm":66,"summary":67},"NVH4L040N120SC1","Silicon Carbide (SiC) MOSFET – 40 mohm, 1200 V, M1, TO-247-4L",{"pn_display":69,"pn_norm":69,"summary":70},"NVT2016N065M3S","Silicon Carbide (SiC) MOSFET",{"pn_display":72,"pn_norm":72,"summary":73},"NVXK2VR80WDT2","SiC Power MOSFET Module",{"pn_display":75,"pn_norm":75,"summary":76},"UF3C065080B7S","Silicon Carbide (SiC) Cascode JFET – EliteSiC, Power N‐Channel, TO‐263‐7, 650 V, 85 mohm",{"pn_display":78,"pn_norm":78,"summary":79},"UF3C065080T3S","Silicon Carbide (SiC) Cascode JFET – EliteSiC, Power N‐Channel, TO220‐3, 650 V, 80 mohm",{"pn_display":81,"pn_norm":81,"summary":82},"UF3C120150B7S","Silicon Carbide (SiC) Cascode JFET - EliteSiC, Power N-Channel, TO-263-7, 1200 V, 150 mohm",{"pn_display":84,"pn_norm":84,"summary":85},"UF3SC065040B7S","Silicon Carbide (SiC) Cascode JFET – EliteSiC, Power N‐Channel, TO‐263‐7, 650 V, 42 mohm"]