[{"data":1,"prerenderedAt":-1},["ShallowReactive",2],{"part:onsemi:NTMD4884NF":3},{"part":4,"mfr":25,"docs":30,"aliases":39,"alts":48,"breadcrumbs":49,"related":55,"more_from_mfr":62},{"id":5,"pn":6,"pn_norm":6,"series":7,"package":8,"lifecycle":9,"summary":10,"params":11,"features":20,"pins":7,"updated_at":21,"category_name":22,"category_name_en":23,"category_path":24},8877,"NTMD4884NF",null,"SOIC-8","active","Power MOSFET and Schottky Diode 30 V, 5.7 A, Single N-Channel with 30 V, 2.8 A, Schottky Barrier Diode",[12,15,18],[13,14],"VDS","30 V",[16,17],"ID","5.7 A",[19,8],"封装",[],"2026-10-10T13:01:01.608Z","MOSFET","MOSFETs","discrete.mosfet",{"slug":26,"name_en":26,"name_cn":27,"website":28,"is_domestic":29},"onsemi","安森美","https:\u002F\u002Fwww.onsemi.com",false,[31],{"id":5,"filename":32,"title":33,"pages":34,"size_bytes":35,"lang":7,"doc_version":7,"published_at":7,"role":36,"outline_count":37,"thumb":38},"ONSEMI-NTMD4884NF.pdf","NTMD4884NF - Power MOSFET and Schottky Diode 30 V, 5.7 A, Single N-Channel with 30 V, 2.8 A, Schottky Barrier Diode",9,176831,"datasheet",0,"\u002Fthumbs\u002F43\u002Fc1\u002F43c1192d40ac4fc5651988e3a356d9e6aa2e067acb0403ce921bd427a9c166f3.jpg",[40,43,45],{"alias_norm":41,"kind":42},"NTMD4884","base",{"alias_norm":44,"kind":42},"NTMD4884N",{"alias_norm":46,"kind":47},"NTMD4884NFR2G","order",[],[50,54],{"name":51,"name_en":52,"path":53},"分立器件","Discretes","discrete",{"name":22,"name_en":23,"path":24},[56,59],{"pn_display":57,"pn_norm":57,"package":8,"summary":58},"NTMD4820N","MOSFET – Power, Dual, N-Channel, SOIC-8 30 V, 8 A",{"pn_display":60,"pn_norm":60,"package":8,"summary":61},"NTMD4840N","MOSFET — Power, Dual, N-Channel, SOIC-8 30 V, 7.5 A",[63,66,69,71,73,76,79,82,85,88,91,93],{"pn_display":64,"pn_norm":64,"summary":65},"NDD03N80Z","N-Channel Power MOSFET 800 V, 4.5 mOhms",{"pn_display":67,"pn_norm":67,"summary":68},"NDD04N50Z","N-Channel Power MOSFET",{"pn_display":70,"pn_norm":70,"summary":68},"NDD60N550U1",{"pn_display":72,"pn_norm":72,"summary":68},"NDD60N900U1",{"pn_display":74,"pn_norm":74,"summary":75},"NDF02N60Z","N-Channel Power MOSFET 600 V, 4.8 Ohms",{"pn_display":77,"pn_norm":77,"summary":78},"NDF08N50Z","N-Channel Power MOSFET 500 V, 0.85 OHMs",{"pn_display":80,"pn_norm":80,"summary":81},"NDF11N50Z","N-Channel Power MOSFET 500 V, 0.52 Ohm",{"pn_display":83,"pn_norm":83,"summary":84},"NDS0610","P-Channel Enhancement Mode Field Effect Transistor",{"pn_display":86,"pn_norm":86,"summary":87},"NTAT6H406N","MOSFET – N-Channel 80 V, 2.9 mΩ, 175 A",{"pn_display":89,"pn_norm":89,"summary":90},"NTB004N10G","MOSFET - Power, N-Channel, 100 V, 201 A, 4.2 mOhms",{"pn_display":92,"pn_norm":92,"summary":7},"NTD4865N",{"pn_display":94,"pn_norm":94,"summary":95},"NTD6416AN","MOSFET - Power, N-Channel 100 V, 17 A, 81 mOhm"]