[{"data":1,"prerenderedAt":-1},["ShallowReactive",2],{"part:onsemi:NDSH50120CF155":3},{"part":4,"mfr":20,"docs":25,"aliases":34,"alts":35,"breadcrumbs":36,"related":42,"more_from_mfr":45},{"id":5,"pn":6,"pn_norm":7,"series":8,"package":9,"lifecycle":10,"summary":11,"params":12,"features":15,"pins":8,"updated_at":16,"category_name":17,"category_name_en":18,"category_path":19},7480,"NDSH50120C-F155","NDSH50120CF155",null,"TO-247","active","Silicon Carbide (SiC) Schottky Diode – EliteSiC, 50 A, 1200 V, D3, TO-247-2L",[13],[14,9],"封装",[],"2026-10-10T13:01:01.608Z","SiC \u002F GaN 宽禁带器件","SiC \u002F GaN Wide-Bandgap","discrete.sic",{"slug":21,"name_en":21,"name_cn":22,"website":23,"is_domestic":24},"onsemi","安森美","https:\u002F\u002Fwww.onsemi.com",false,[26],{"id":5,"filename":27,"title":28,"pages":29,"size_bytes":30,"lang":8,"doc_version":8,"published_at":8,"role":31,"outline_count":32,"thumb":33},"ONSEMI-NDSH50120CF155.pdf","NDSH50120C-F155 - Silicon Carbide (SiC) Schottky Diode – EliteSiC, 50 A, 1200 V, D3, TO-247-2L",6,210584,"datasheet",0,"\u002Fthumbs\u002F9c\u002F66\u002F9c66d3930d3e626b1b1f138dab71710d5961d9b46a574af661b4ad0a2c684e5e.jpg",[],[],[37,41],{"name":38,"name_en":39,"path":40},"分立器件","Discretes","discrete",{"name":17,"name_en":18,"path":19},[43],{"pn_display":44,"pn_norm":44,"package":9,"summary":11},"NDSH50120C",[46,49,52,55,58,61,64,67,70,73,76,79],{"pn_display":47,"pn_norm":47,"summary":48},"NCP58920","Enhanced Mode GaN Power Switch with Integrated Driver 650 V, 150 mΩ, 11 A, TQFN26",{"pn_display":50,"pn_norm":50,"summary":51},"NDC25170A","Silicon Carbide (SiC) Schottky Diode – EliteSiC, 25 A, 1700 V, D1, Die",{"pn_display":53,"pn_norm":53,"summary":54},"NDSH10170A","Silicon Carbide (SiC) Schottky Diode – EliteSiC, 10 A, 1700 V, D1, TO-247-2L",{"pn_display":56,"pn_norm":56,"summary":57},"NVT2012N065M3S","Silicon Carbide (SiC) MOSFET – EliteSiC, 12.7 mohm, 650 V, M3S, T2PAK",{"pn_display":59,"pn_norm":59,"summary":60},"UJ3C120080K3S","Silicon Carbide (SiC) Cascode JFET - EliteSiC, Power N-Channel, TO247-3, 1200 V, 80 mohm",{"pn_display":62,"pn_norm":62,"summary":63},"NCP58922","Enhanced Mode GaN Power Switch with Integrated Driver 650 V, 78 mΩ, 18 A, TQFN26",{"pn_display":65,"pn_norm":65,"summary":66},"NCP58933ABT","Enhancement Mode GaN Power Switch with Integrated Gate Clamp and Protection",{"pn_display":68,"pn_norm":68,"summary":69},"NCP58934ABL","Enhancement Mode GaN Power Switch with Integrated Gate Clamp and Protection 650 V, 27 mΩ, PDSO‐F9",{"pn_display":71,"pn_norm":71,"summary":72},"NCP58935ABT",".revP1",{"pn_display":74,"pn_norm":74,"summary":75},"NDC10170A","Silicon Carbide (SiC) Schottky Diode – EliteSiC, 10 A, 1700 V, D1, Die",{"pn_display":77,"pn_norm":77,"summary":78},"NDSH20120C","Silicon Carbide (SiC) Schottky Diode – EliteSiC, 20 A, 1200 V, D3, TO-247-2L",{"pn_display":80,"pn_norm":80,"summary":81},"NDSH25170A","Silicon Carbide (SiC) Schottky Diode – EliteSiC, 25 A, 1700 V, D1, TO-247-2L"]