[{"data":1,"prerenderedAt":-1},["ShallowReactive",2],{"part:onsemi:NCP58934ABT":3},{"part":4,"mfr":19,"docs":24,"aliases":33,"alts":41,"breadcrumbs":42,"related":48,"more_from_mfr":63},{"id":5,"pn":6,"pn_norm":6,"series":7,"package":7,"lifecycle":8,"summary":9,"params":10,"features":14,"pins":7,"updated_at":15,"category_name":16,"category_name_en":17,"category_path":18},6812,"NCP58934ABT",null,"active","Enhancement Mode GaN Power Switch with Integrated Gate Clamp and Protection 650 V, 27 mΩ, PDSO‐G16",[11],[12,13],"RDS(on)","27 mΩ",[],"2026-10-10T13:01:01.608Z","SiC \u002F GaN 宽禁带器件","SiC \u002F GaN Wide-Bandgap","discrete.sic",{"slug":20,"name_en":20,"name_cn":21,"website":22,"is_domestic":23},"onsemi","安森美","https:\u002F\u002Fwww.onsemi.com",false,[25],{"id":5,"filename":26,"title":27,"pages":28,"size_bytes":29,"lang":7,"doc_version":7,"published_at":7,"role":30,"outline_count":31,"thumb":32},"ONSEMI-NCP58934ABT.pdf","NCP58934ABT - Enhancement Mode GaN Power Switch with Integrated Gate Clamp and Protection 650 V, 27 mΩ, PDSO‐G16",11,438800,"datasheet",0,"\u002Fthumbs\u002F49\u002F19\u002F4919ee359dfdd7d73bb2f58f0e55eb2fc39596683da65041b1d6237d31794327.jpg",[34,37,39],{"alias_norm":35,"kind":36},"NCP58934","base",{"alias_norm":38,"kind":36},"NCP58934A",{"alias_norm":40,"kind":36},"NCP58934AB",[],[43,47],{"name":44,"name_en":45,"path":46},"分立器件","Discretes","discrete",{"name":16,"name_en":17,"path":18},[49,52,54,57,60],{"pn_display":50,"pn_norm":50,"package":7,"summary":51},"NCP58933ABL","Enhancement Mode GaN Power Switch with Integrated Gate Clamp and Protection",{"pn_display":53,"pn_norm":53,"package":7,"summary":51},"NCP58933ABT",{"pn_display":55,"pn_norm":55,"package":7,"summary":56},"NCP58934ABL","Enhancement Mode GaN Power Switch with Integrated Gate Clamp and Protection 650 V, 27 mΩ, PDSO‐F9",{"pn_display":58,"pn_norm":58,"package":7,"summary":59},"NCP58935ABL","Enhancement Mode GaN Power Switch with Integrated Gate Clamp and Protection 650 V, 19 mΩ, PDSO‐F9",{"pn_display":61,"pn_norm":61,"package":7,"summary":62},"NCP58935ABT",".revP1",[64,67,70,73,76,79,82,85,88],{"pn_display":65,"pn_norm":65,"summary":66},"NVT2012N065M2","MOSFET - SiC Power, Single N-Channel, T2PAK",{"pn_display":68,"pn_norm":68,"summary":69},"NCP58920","Enhanced Mode GaN Power Switch with Integrated Driver 650 V, 150 mΩ, 11 A, TQFN26",{"pn_display":71,"pn_norm":71,"summary":72},"NCP58921","Enhanced Mode GaN Power Switch with Integrated Driver 650 V, 50 mΩ, 30 A, TQFN26",{"pn_display":74,"pn_norm":74,"summary":75},"NCP58922","Enhanced Mode GaN Power Switch with Integrated Driver 650 V, 78 mΩ, 18 A, TQFN26",{"pn_display":77,"pn_norm":77,"summary":78},"NDC10170A","Silicon Carbide (SiC) Schottky Diode – EliteSiC, 10 A, 1700 V, D1, Die",{"pn_display":80,"pn_norm":80,"summary":81},"NDC25170A","Silicon Carbide (SiC) Schottky Diode – EliteSiC, 25 A, 1700 V, D1, Die",{"pn_display":83,"pn_norm":83,"summary":84},"NDSH10120C","Silicon Carbide (SiC) Schottky Diode - EliteSiC, 10 A, 1200 V, D3, TO-247-2L",{"pn_display":86,"pn_norm":87,"summary":84},"NDSH10120C-F155","NDSH10120CF155",{"pn_display":89,"pn_norm":89,"summary":90},"NDSH10170A","Silicon Carbide (SiC) Schottky Diode – EliteSiC, 10 A, 1700 V, D1, TO-247-2L"]