[{"data":1,"prerenderedAt":-1},["ShallowReactive",2],{"part:nxp:MWIC930N":3},{"part":4,"mfr":19,"docs":25,"aliases":34,"alts":41,"breadcrumbs":42,"related":48,"more_from_mfr":51},{"id":5,"pn":6,"pn_norm":6,"series":7,"package":7,"lifecycle":8,"summary":9,"params":10,"features":14,"pins":7,"updated_at":15,"category_name":16,"category_name_en":17,"category_path":18},14234,"MWIC930N",null,"active","R1, MWIC930GNR1 746-960 MHz, 30 W, 26-28 V Single N-CDMA, GSM\u002FGSM EDGE RF LDMOS Wideband Integrated Power Amplifiers",[11],[12,13],"工作温度","-30 ~ 115 °C",[],"2026-10-10T13:01:01.608Z","射频功率器件","RF Power","rf.power",{"slug":20,"name_en":21,"name_cn":22,"website":23,"is_domestic":24},"nxp","NXP","恩智浦","https:\u002F\u002Fwww.nxp.com",false,[26],{"id":5,"filename":27,"title":28,"pages":29,"size_bytes":30,"lang":7,"doc_version":7,"published_at":7,"role":31,"outline_count":32,"thumb":33},"NXP-MWIC930N.pdf","MWIC930NR1, MWIC930GNR1 746-960 MHz, 30 W, 26-28 V Single N-CDMA, GSM\u002FGSM EDGE RF LDMOS Wideband Integrated Power Amplifiers",20,633089,"datasheet",0,"\u002Fthumbs\u002F63\u002F6c\u002F636c30357a08b7dc823f0099c71bba321645c8a03d96d8c8549768cc26fd219a.jpg",[35,38],{"alias_norm":36,"kind":37},"MWIC930","base",{"alias_norm":39,"kind":40},"MWIC930NR1","order",[],[43,47],{"name":44,"name_en":45,"path":46},"射频 \u002F 无线","RF \u002F Wireless","rf",{"name":16,"name_en":17,"path":18},[49],{"pn_display":36,"pn_norm":36,"package":7,"summary":50},"746-960 MHz, 30 W, 26-28 V Single N-CDMA, GSM\u002FGSM EDGE RF LDMOS Wideband Integrated Power Amplifiers",[52,56,59,62,65,68,71,74,77,80,83,86],{"pn_display":53,"pn_norm":54,"summary":55},"MRF18060A-2","MRF18060A2","1805-1880 MHz, 60 W, 26 V Lateral N-Channel RF Power MOSFET",{"pn_display":57,"pn_norm":57,"summary":58},"MRFG35002N6","3.5 GHz, 1.5 W, 6 V Power FET GaAs PHEMT",{"pn_display":60,"pn_norm":60,"summary":61},"A2I20H060N","1800-2200 MHz, 12 W Avg, 28 V Data Sheet",{"pn_display":63,"pn_norm":63,"summary":64},"A2I25H060N","2300-2690 MHz, 10.5 W Avg, 28 V Data Sheet",{"pn_display":66,"pn_norm":66,"summary":67},"A3I20X050N","1800-2200 MHz, 6.3 W Avg, 28 V Data Sheet",{"pn_display":69,"pn_norm":69,"summary":70},"AFIC901N","30 dBm, 1.8-1000 MHz, 7.5 V Data Sheet",{"pn_display":72,"pn_norm":72,"summary":73},"MHL18336","1800-1900 MHz, 4 W, 30 dB, RF Linear LDMOS Amplifier",{"pn_display":75,"pn_norm":75,"summary":76},"MHL19926","1930-1990 MHz, 10 W, 29.4 dB RF Linear LDMOS Amplifier",{"pn_display":78,"pn_norm":78,"summary":79},"MHL21336NN","2110-2170 MHz, 3.0 W, 31 dB RF Linear LDMOS Amplifier",{"pn_display":81,"pn_norm":81,"summary":82},"MHL9318","3.0 W, 17.5 dB, 860-900 MHz RF Linear LDMOS Amplifier",{"pn_display":84,"pn_norm":84,"summary":85},"MHL9838N","800-925 MHz, 8.0 W, 31 dB RF Linear LDMOS Amplifier",{"pn_display":87,"pn_norm":87,"summary":88},"MHV5IC1810N","R2 1805-1990 MHz, 5 W Avg., 28 V GSM\u002FGSM EDGE RF LDMOS Wideband Integrated Power Amplifier"]