[{"data":1,"prerenderedAt":-1},["ShallowReactive",2],{"part:nxp:MW4IC001N":3},{"part":4,"mfr":16,"docs":22,"aliases":31,"alts":35,"breadcrumbs":36,"related":42,"more_from_mfr":64},{"id":5,"pn":6,"pn_norm":6,"series":7,"package":7,"lifecycle":8,"summary":9,"params":10,"features":11,"pins":7,"updated_at":12,"category_name":13,"category_name_en":14,"category_path":15},14191,"MW4IC001N",null,"active","R4 800-2170 MHz, 900 mW, 28 V W-CDMA RF LDMOS Wideband Integrated Power Amplifiers",[],[],"2026-10-10T13:01:01.608Z","射频功率器件","RF Power","rf.power",{"slug":17,"name_en":18,"name_cn":19,"website":20,"is_domestic":21},"nxp","NXP","恩智浦","https:\u002F\u002Fwww.nxp.com",false,[23],{"id":5,"filename":24,"title":25,"pages":26,"size_bytes":27,"lang":7,"doc_version":7,"published_at":7,"role":28,"outline_count":29,"thumb":30},"NXP-MW4IC001N.pdf","MW4IC001NR4 800-2170 MHz, 900 mW, 28 V W-CDMA RF LDMOS Wideband Integrated Power Amplifiers",16,689812,"datasheet",0,"\u002Fthumbs\u002Ff2\u002Fe6\u002Ff2e6d7274ea83006627c42b5daf007df8faf18a66aa48249c54bfddfdf5f10e2.jpg",[32],{"alias_norm":33,"kind":34},"MW4IC001","base",[],[37,41],{"name":38,"name_en":39,"path":40},"射频 \u002F 无线","RF \u002F Wireless","rf",{"name":13,"name_en":14,"path":15},[43,46,49,52,55,58,61],{"pn_display":44,"pn_norm":44,"package":7,"summary":45},"MW4IC001MR4","800-2170 MHz, 900 mW, 28 V W-CDMA RF LDMOS Wideband Integrated Power Amplifiers",{"pn_display":47,"pn_norm":47,"package":7,"summary":48},"MW4IC2020","1805-1990 MHz, 20 W, 26 V, GSM\u002FGSM EDGE, CDMA, RF LDMOS Wideband Integrated Power Amplifiers",{"pn_display":50,"pn_norm":50,"package":7,"summary":51},"MW4IC2020N","BR1, MW4IC2020GNBR1 1805-1990 MHz, 20 W, 26 V, GSM\u002FGSM EDGE, CDMA, RF LDMOS Wideband Integrated Power Amplifiers",{"pn_display":53,"pn_norm":53,"package":7,"summary":54},"MW4IC2230","2110-2170 MHz, 30 W, 28 V Single W-CDMA RF LDMOS Wideband Integrated Power Amplifiers",{"pn_display":56,"pn_norm":56,"package":7,"summary":57},"MW4IC2230N","BR1, MW4IC2230GNBR1 2110-2170 MHz, 30 W, 28 V Single W-CDMA RF LDMOS Wideband Integrated Power Amplifiers",{"pn_display":59,"pn_norm":59,"package":7,"summary":60},"MW4IC915","860-960 MHz, 15 W, 26 V GSM\u002FGSM EDGE, N-CDMA RF LDMOS Wideband Integrated Power Amplifiers",{"pn_display":62,"pn_norm":62,"package":7,"summary":63},"MW4IC915N","BR1, MW4IC915GNBR1 860-960 MHz, 15 W, 26 V GSM\u002FGSM EDGE, N-CDMA RF LDMOS Wideband Integrated Power Amplifiers",[65,68,71,74,77,80,84,87,90,93,96,99],{"pn_display":66,"pn_norm":66,"summary":67},"A2I20H060N","1800-2200 MHz, 12 W Avg, 28 V Data Sheet",{"pn_display":69,"pn_norm":69,"summary":70},"A2I25H060N","2300-2690 MHz, 10.5 W Avg, 28 V Data Sheet",{"pn_display":72,"pn_norm":72,"summary":73},"AFIC901N","30 dBm, 1.8-1000 MHz, 7.5 V Data Sheet",{"pn_display":75,"pn_norm":75,"summary":76},"MRF6S19100H","R3, MRF6S19100HSR3 1930-1990 MHz, 22 W Avg., 28 V, 2 x N-CDMA Lateral N-Channel RF Power MOSFETs",{"pn_display":78,"pn_norm":78,"summary":79},"MRF6S19120H","1930-1990 MHz, 19 W Avg., 28 V Single N-CDMA Lateral N-Channel RF Power MOSFETs",{"pn_display":81,"pn_norm":82,"summary":83},"MRF9060-2","MRF90602","MRF9060LR1 945 MHz, 60 W, 26 V Lateral N-Channel Broadband RF Power MOSFET",{"pn_display":85,"pn_norm":85,"summary":86},"MRFE6VP61K25N","MRFE6VP61K25GN 1.8–600 MHz, 1250 W CW, 50 V Wideband RF Power LDMOS Transistors Data Sheet",{"pn_display":88,"pn_norm":88,"summary":89},"MRFG35010MT1","3.5 GHz, 9 W, 12 V Power FET GaAs PHEMT",{"pn_display":91,"pn_norm":91,"summary":92},"MHL19338N","1900-2000 MHz, 4.0 W, 30 dB RF Linear LDMOS Amplifier",{"pn_display":94,"pn_norm":94,"summary":95},"MHL19926N","1930-1990 MHz, 10 W, 29.4 dB RF Linear LDMOS Amplifier",{"pn_display":97,"pn_norm":97,"summary":98},"MHL21336NN","2110-2170 MHz, 3.0 W, 31 dB RF Linear LDMOS Amplifier",{"pn_display":100,"pn_norm":100,"summary":101},"MHL9838N","800-925 MHz, 8.0 W, 31 dB RF Linear LDMOS Amplifier"]