[{"data":1,"prerenderedAt":-1},["ShallowReactive",2],{"part:nxp:MW4IC001MR4":3},{"part":4,"mfr":16,"docs":22,"aliases":31,"alts":32,"breadcrumbs":33,"related":39,"more_from_mfr":43},{"id":5,"pn":6,"pn_norm":6,"series":7,"package":7,"lifecycle":8,"summary":9,"params":10,"features":11,"pins":7,"updated_at":12,"category_name":13,"category_name_en":14,"category_path":15},14190,"MW4IC001MR4",null,"eol","800-2170 MHz, 900 mW, 28 V W-CDMA RF LDMOS Wideband Integrated Power Amplifiers",[],[],"2026-10-10T13:01:01.608Z","射频功率器件","RF Power","rf.power",{"slug":17,"name_en":18,"name_cn":19,"website":20,"is_domestic":21},"nxp","NXP","恩智浦","https:\u002F\u002Fwww.nxp.com",false,[23],{"id":5,"filename":24,"title":25,"pages":26,"size_bytes":27,"lang":7,"doc_version":7,"published_at":7,"role":28,"outline_count":29,"thumb":30},"NXP-MW4IC001MR4.pdf","MW4IC001MR4 800-2170 MHz, 900 mW, 28 V W-CDMA RF LDMOS Wideband Integrated Power Amplifiers - Archived",16,680526,"datasheet",0,"\u002Fthumbs\u002F1a\u002F06\u002F1a06b94d16ee7d333323c198e82bb4768b4a689f991f0997c0846a0c8a7f9575.jpg",[],[],[34,38],{"name":35,"name_en":36,"path":37},"射频 \u002F 无线","RF \u002F Wireless","rf",{"name":13,"name_en":14,"path":15},[40],{"pn_display":41,"pn_norm":41,"package":7,"summary":42},"MW4IC001N","R4 800-2170 MHz, 900 mW, 28 V W-CDMA RF LDMOS Wideband Integrated Power Amplifiers",[44,48,51,54,57,60,63,66,69,72,75,78],{"pn_display":45,"pn_norm":46,"summary":47},"MRF18060A-2","MRF18060A2","1805-1880 MHz, 60 W, 26 V Lateral N-Channel RF Power MOSFET",{"pn_display":49,"pn_norm":49,"summary":50},"MRFG35002N6","3.5 GHz, 1.5 W, 6 V Power FET GaAs PHEMT",{"pn_display":52,"pn_norm":52,"summary":53},"A2I20H060N","1800-2200 MHz, 12 W Avg, 28 V Data Sheet",{"pn_display":55,"pn_norm":55,"summary":56},"A2I25H060N","2300-2690 MHz, 10.5 W Avg, 28 V Data Sheet",{"pn_display":58,"pn_norm":58,"summary":59},"AFIC901N","30 dBm, 1.8-1000 MHz, 7.5 V Data Sheet",{"pn_display":61,"pn_norm":61,"summary":62},"MHL21336NN","2110-2170 MHz, 3.0 W, 31 dB RF Linear LDMOS Amplifier",{"pn_display":64,"pn_norm":64,"summary":65},"MHV5IC1810N","R2 1805-1990 MHz, 5 W Avg., 28 V GSM\u002FGSM EDGE RF LDMOS Wideband Integrated Power Amplifier",{"pn_display":67,"pn_norm":67,"summary":68},"MHVIC910HR2","960 MHz, 10 W, 26 V GSM Cellular RF LDMOS Integrated Circuit",{"pn_display":70,"pn_norm":70,"summary":71},"MMRF1006H","10-500 MHz, 1000 W, 50 V Data Sheet",{"pn_display":73,"pn_norm":73,"summary":74},"MMRF1013H","2700-2900 MHz, 320 W, 30 V Pulse S-Band RF Power MOSFETs",{"pn_display":76,"pn_norm":76,"summary":77},"MRF1513N","T1 520 MHz, 3 W, 12.5 V, Lateral N-Channel Broadband RF Power MOSFET",{"pn_display":79,"pn_norm":79,"summary":80},"MRF1517","520 MHz, 8 W, 7.5 V Lateral N-Channel Broadband RF Power MOSFET"]