[{"data":1,"prerenderedAt":-1},["ShallowReactive",2],{"part:nxp:MRF6S9125N":3},{"part":4,"mfr":16,"docs":22,"aliases":31,"alts":40,"breadcrumbs":41,"related":47,"more_from_mfr":68},{"id":5,"pn":6,"pn_norm":6,"series":7,"package":7,"lifecycle":8,"summary":9,"params":10,"features":11,"pins":7,"updated_at":12,"category_name":13,"category_name_en":14,"category_path":15},13967,"MRF6S9125N",null,"eol","865-960 MHz, 27 W Avg., 28 V Single N-CDMA, GSM EDGE Lateral N-Channel RF Power MOSFETs",[],[],"2026-10-10T13:01:01.608Z","射频功率器件","RF Power","rf.power",{"slug":17,"name_en":18,"name_cn":19,"website":20,"is_domestic":21},"nxp","NXP","恩智浦","https:\u002F\u002Fwww.nxp.com",false,[23],{"id":5,"filename":24,"title":25,"pages":26,"size_bytes":27,"lang":7,"doc_version":7,"published_at":7,"role":28,"outline_count":29,"thumb":30},"NXP-MRF6S9125N.pdf","MRF6S9125NR1, MRF6S9125NBR1 865-960 MHz, 27 W Avg., 28 V Single N-CDMA, GSM EDGE Lateral N-Channel RF Power MOSFETs - Archived",23,1122244,"datasheet",0,"\u002Fthumbs\u002Fea\u002Fb2\u002Feab21b2246c183601a923a600fe82d377364d362fe4935701ecde31cc2179514.jpg",[32,35,38],{"alias_norm":33,"kind":34},"MRF6S9125","base",{"alias_norm":36,"kind":37},"MRF6S9125NBR1","order",{"alias_norm":39,"kind":37},"MRF6S9125NR1",[],[42,46],{"name":43,"name_en":44,"path":45},"射频 \u002F 无线","RF \u002F Wireless","rf",{"name":13,"name_en":14,"path":15},[48,51,54,57,60,62,65],{"pn_display":49,"pn_norm":49,"package":7,"summary":50},"MRF6S9045","MR1, MRF6S9045MBR1 880 MHz, 10 W Avg., 28 V Single N-CDMA Lateral N-Channel Broadband RF Power MOSFETs",{"pn_display":52,"pn_norm":52,"package":7,"summary":53},"MRF6S9045N","880 MHz, 10 W Avg., 28 V Single N-CDMA Lateral N-Channel Broadband RF Power MOSFETs",{"pn_display":55,"pn_norm":55,"package":7,"summary":56},"MRF6S9060","MR1, MRF6S9060MBR1 880 MHz, 14 W Avg., 28 V Single N-CDMA Lateral N-Channel Broadband RF Power MOSFETs",{"pn_display":58,"pn_norm":58,"package":7,"summary":59},"MRF6S9060N","880 MHz, 14 W Avg., 28 V Single N-CDMA Lateral N-Channel Broadband RF Power MOSFETs",{"pn_display":33,"pn_norm":33,"package":7,"summary":61},"MR1, MRF6S9125MBR1 880 MHz, 27 W Avg., 28 V Single N-CDMA Lateral N-Channel RF Power MOSFETs",{"pn_display":63,"pn_norm":63,"package":7,"summary":64},"MRF6S9130H","880 MHz, 27 W Avg., 28 V Single N-CDMA Lateral N-Channel RF Power MOSFETs",{"pn_display":66,"pn_norm":66,"package":7,"summary":67},"MRF6S9160H","880 MHz, 35 W Avg., 28 V Single N-CDMA Lateral N-Channel RF Power MOSFETs",[69,73,76,79,82,85,88,91,94,97,100,103],{"pn_display":70,"pn_norm":71,"summary":72},"MRF18060A-2","MRF18060A2","1805-1880 MHz, 60 W, 26 V Lateral N-Channel RF Power MOSFET",{"pn_display":74,"pn_norm":74,"summary":75},"MRFG35002N6","3.5 GHz, 1.5 W, 6 V Power FET GaAs PHEMT",{"pn_display":77,"pn_norm":77,"summary":78},"A2I20H060N","1800-2200 MHz, 12 W Avg, 28 V Data Sheet",{"pn_display":80,"pn_norm":80,"summary":81},"A2I25H060N","2300-2690 MHz, 10.5 W Avg, 28 V Data Sheet",{"pn_display":83,"pn_norm":83,"summary":84},"A3I20X050N","1800-2200 MHz, 6.3 W Avg, 28 V Data Sheet",{"pn_display":86,"pn_norm":86,"summary":87},"AFIC901N","30 dBm, 1.8-1000 MHz, 7.5 V Data Sheet",{"pn_display":89,"pn_norm":89,"summary":90},"AFV10700H","700 W Pulse, 960-1215 MHz, 52 V Data Sheet",{"pn_display":92,"pn_norm":92,"summary":93},"MHL18336","1800-1900 MHz, 4 W, 30 dB, RF Linear LDMOS Amplifier",{"pn_display":95,"pn_norm":95,"summary":96},"MHL19338","1900-2000 MHz, 4.0 W, 30 dB RF Linear LDMOS Amplifier",{"pn_display":98,"pn_norm":98,"summary":99},"MHL19926","1930-1990 MHz, 10 W, 29.4 dB RF Linear LDMOS Amplifier",{"pn_display":101,"pn_norm":101,"summary":102},"MHL21336NN","2110-2170 MHz, 3.0 W, 31 dB RF Linear LDMOS Amplifier",{"pn_display":104,"pn_norm":104,"summary":105},"MHL9318","3.0 W, 17.5 dB, 860-900 MHz RF Linear LDMOS Amplifier"]