[{"data":1,"prerenderedAt":-1},["ShallowReactive",2],{"part:nxp:MRF190301":3},{"part":4,"mfr":17,"docs":23,"aliases":32,"alts":33,"breadcrumbs":34,"related":40,"more_from_mfr":71},{"id":5,"pn":6,"pn_norm":7,"series":8,"package":8,"lifecycle":9,"summary":10,"params":11,"features":12,"pins":8,"updated_at":13,"category_name":14,"category_name_en":15,"category_path":16},13843,"MRF19030-1","MRF190301",null,"eol","1930-1990 MHz, 30 W, 26 V Lateral N-Channel RF Power MOSFET",[],[],"2026-10-10T13:01:01.608Z","射频功率器件","RF Power","rf.power",{"slug":18,"name_en":19,"name_cn":20,"website":21,"is_domestic":22},"nxp","NXP","恩智浦","https:\u002F\u002Fwww.nxp.com",false,[24],{"id":5,"filename":25,"title":26,"pages":27,"size_bytes":28,"lang":8,"doc_version":8,"published_at":8,"role":29,"outline_count":30,"thumb":31},"NXP-MRF190301.pdf","MRF19030LSR3 1930-1990 MHz, 30 W, 26 V Lateral N-Channel RF Power MOSFET - Archived",9,830118,"datasheet",0,"\u002Fthumbs\u002Fab\u002F4b\u002Fab4b09d2c63b91ec5c11730acd83c791bc31380b741023293a30aabece14fcc4.jpg",[],[],[35,39],{"name":36,"name_en":37,"path":38},"射频 \u002F 无线","RF \u002F Wireless","rf",{"name":14,"name_en":15,"path":16},[41,44,47,50,53,56,60,63,65,68],{"pn_display":42,"pn_norm":42,"package":8,"summary":43},"MRF19030","1930-1990 MHz, 30 W, 26 V Lateral N-Channel RF Power MOSFETs",{"pn_display":45,"pn_norm":46,"package":8,"summary":10},"MRF19030-2","MRF190302",{"pn_display":48,"pn_norm":48,"package":8,"summary":49},"MRF19045","1930-1990 MHz, 45 W, 26 V Lateral N-Channel RF Power MOSFETs",{"pn_display":51,"pn_norm":51,"package":8,"summary":52},"MRF19060","1930-1990 MHz, 60 W, 26 V Lateral N-Channel RF Power MOSFETs",{"pn_display":54,"pn_norm":54,"package":8,"summary":55},"MRF19085","1930-1990 MHz, 90 W, 26 V Lateral N-Channel RF Power MOSFETs",{"pn_display":57,"pn_norm":58,"package":8,"summary":59},"MRF19085-1","MRF190851","1930-1990 MHz, 90 W, 26 V Lateral N-Channel RF Power MOSFET",{"pn_display":61,"pn_norm":62,"package":8,"summary":59},"MRF19085-2","MRF190852",{"pn_display":64,"pn_norm":64,"package":8,"summary":59},"MRF19090",{"pn_display":66,"pn_norm":66,"package":8,"summary":67},"MRF19120","1990 MHz, 120 W, 26 V Lateral N-Channel RF Power MOSFET",{"pn_display":69,"pn_norm":69,"package":8,"summary":70},"MRF19125","1930-1990 MHz, 125 W, 26 V Lateral N-Channel RF Power MOSFET",[72,76,79,82,85,88,91,94,97,100,103,106],{"pn_display":73,"pn_norm":74,"summary":75},"MRF18060A-2","MRF18060A2","1805-1880 MHz, 60 W, 26 V Lateral N-Channel RF Power MOSFET",{"pn_display":77,"pn_norm":77,"summary":78},"MRFG35002N6","3.5 GHz, 1.5 W, 6 V Power FET GaAs PHEMT",{"pn_display":80,"pn_norm":80,"summary":81},"A2I20H060N","1800-2200 MHz, 12 W Avg, 28 V Data Sheet",{"pn_display":83,"pn_norm":83,"summary":84},"A2I25H060N","2300-2690 MHz, 10.5 W Avg, 28 V Data Sheet",{"pn_display":86,"pn_norm":86,"summary":87},"AFIC901N","30 dBm, 1.8-1000 MHz, 7.5 V Data Sheet",{"pn_display":89,"pn_norm":89,"summary":90},"MHL18336","1800-1900 MHz, 4 W, 30 dB, RF Linear LDMOS Amplifier",{"pn_display":92,"pn_norm":92,"summary":93},"MHL19926","1930-1990 MHz, 10 W, 29.4 dB RF Linear LDMOS Amplifier",{"pn_display":95,"pn_norm":95,"summary":96},"MHL21336NN","2110-2170 MHz, 3.0 W, 31 dB RF Linear LDMOS Amplifier",{"pn_display":98,"pn_norm":98,"summary":99},"MHV5IC1810N","R2 1805-1990 MHz, 5 W Avg., 28 V GSM\u002FGSM EDGE RF LDMOS Wideband Integrated Power Amplifier",{"pn_display":101,"pn_norm":101,"summary":102},"MHVIC910HR2","960 MHz, 10 W, 26 V GSM Cellular RF LDMOS Integrated Circuit",{"pn_display":104,"pn_norm":104,"summary":105},"MMRF1004N","1600-2200 MHz, 10 W, 28 V, GSM, GSM EDGE, Single N-CDMA, 2 x W-CDMA Lateral N-Channel RF Power MOSFETs",{"pn_display":107,"pn_norm":107,"summary":108},"MMRF1005H","1300 MHz, 250 W, 50 V Lateral N-Channel RF Power MOSFETs"]