[{"data":1,"prerenderedAt":-1},["ShallowReactive",2],{"part:nxp:MMRF1016H":3},{"part":4,"mfr":16,"docs":22,"aliases":31,"alts":35,"breadcrumbs":36,"related":42,"more_from_mfr":104},{"id":5,"pn":6,"pn_norm":6,"series":7,"package":7,"lifecycle":8,"summary":9,"params":10,"features":11,"pins":7,"updated_at":12,"category_name":13,"category_name_en":14,"category_path":15},13507,"MMRF1016H",null,"active","2-500 MHz, 600 W, 50 V Broadband RF Power MOSFET",[],[],"2026-10-10T13:01:01.608Z","射频功率器件","RF Power","rf.power",{"slug":17,"name_en":18,"name_cn":19,"website":20,"is_domestic":21},"nxp","NXP","恩智浦","https:\u002F\u002Fwww.nxp.com",false,[23],{"id":5,"filename":24,"title":25,"pages":26,"size_bytes":27,"lang":7,"doc_version":7,"published_at":7,"role":28,"outline_count":29,"thumb":30},"NXP-MMRF1016H.pdf","MMRF1016HR5 2-500 MHz, 600 W, 50 V Broadband RF Power MOSFET - Data Sheet",19,1064022,"datasheet",0,"\u002Fthumbs\u002F1d\u002F31\u002F1d315ad6334051eb990a9f48b5d0c3a25f04d3ef1ebfbe152ac351cc0348a796.jpg",[32],{"alias_norm":33,"kind":34},"MMRF1016","base",[],[37,41],{"name":38,"name_en":39,"path":40},"射频 \u002F 无线","RF \u002F Wireless","rf",{"name":13,"name_en":14,"path":15},[43,46,49,52,55,58,61,64,67,70,73,76,79,82,85,89,92,95,98,101],{"pn_display":44,"pn_norm":44,"package":7,"summary":45},"MMRF1004N","1600-2200 MHz, 10 W, 28 V, GSM, GSM EDGE, Single N-CDMA, 2 x W-CDMA Lateral N-Channel RF Power MOSFETs",{"pn_display":47,"pn_norm":47,"package":7,"summary":48},"MMRF1005H","1300 MHz, 250 W, 50 V Lateral N-Channel RF Power MOSFETs",{"pn_display":50,"pn_norm":50,"package":7,"summary":51},"MMRF1006H","10-500 MHz, 1000 W, 50 V Data Sheet",{"pn_display":53,"pn_norm":53,"package":7,"summary":54},"MMRF1007H","965-1215 MHz, 1000 W, 50 V Lateral N-Channel Broadband RF Power MOSFETs",{"pn_display":56,"pn_norm":56,"package":7,"summary":57},"MMRF1008H","960-1215 MHz, 275 W, 50 V Data Sheet",{"pn_display":59,"pn_norm":59,"package":7,"summary":60},"MMRF1009H","960-1215 MHz, 500 W, 50 V Pulse Lateral N-Channel RF Power MOSFETs",{"pn_display":62,"pn_norm":62,"package":7,"summary":63},"MMRF1011H","1400 MHz, 330 W, 50 V Pulse L-Band RF Power MOSFETs",{"pn_display":65,"pn_norm":65,"package":7,"summary":66},"MMRF1012N","10-450 MHz, 10 W, 50 V Broadband RF Power MOSFET",{"pn_display":68,"pn_norm":68,"package":7,"summary":69},"MMRF1013H","2700-2900 MHz, 320 W, 30 V Pulse S-Band RF Power MOSFETs",{"pn_display":71,"pn_norm":71,"package":7,"summary":72},"MMRF1014N","1-2000 MHz, 4 W, 28 V Class A\u002FAB RF Power MOSFET",{"pn_display":74,"pn_norm":74,"package":7,"summary":75},"MMRF1015N","1-2000 MHz, 10 W, 28 V Class A\u002FAB RF Power MOSFETs",{"pn_display":77,"pn_norm":77,"package":7,"summary":78},"MMRF1017N","720-960 MHz, 80 W Avg., 28 V Airfast RF Power LDMOS Transistor",{"pn_display":80,"pn_norm":80,"package":7,"summary":81},"MMRF1018N","470-860 MHz, 90 W, 50 V Broadband RF Power LDMOS Transistors",{"pn_display":83,"pn_norm":83,"package":7,"summary":84},"MMRF1019N","1090 MHz, 10 W, 50 V Pulse RF Power LDMOS Transistor",{"pn_display":86,"pn_norm":87,"package":7,"summary":88},"MMRF1020-04N","MMRF102004N","720-960 MHz, 100 W Avg., 48 V RF Power LDMOS Transistors",{"pn_display":90,"pn_norm":90,"package":7,"summary":91},"MMRF1021N","136-941 MHz, 7 W, 7.5 V Wideband RF Power LDMOS Transistor",{"pn_display":93,"pn_norm":93,"package":7,"summary":94},"MMRF1022HS","2110-2170 MHz, 63 W Avg, 28 V Data Sheet",{"pn_display":96,"pn_norm":96,"package":7,"summary":97},"MMRF1023HS","2300-2400 MHz, 66 W Avg, 28 V Data Sheet",{"pn_display":99,"pn_norm":99,"package":7,"summary":100},"MMRF1024HS","2496-2690 MHz, 50 W Avg, 28 V Data Sheet",{"pn_display":102,"pn_norm":102,"package":7,"summary":103},"MMRF1050H","1050 W Peak over 850-950 MHz, 50 V Data Sheet",[105,108,111,114,117,120,123,127,130,133,136,139],{"pn_display":106,"pn_norm":106,"summary":107},"A2I20H060N","1800-2200 MHz, 12 W Avg, 28 V Data Sheet",{"pn_display":109,"pn_norm":109,"summary":110},"A2I25H060N","2300-2690 MHz, 10.5 W Avg, 28 V Data Sheet",{"pn_display":112,"pn_norm":112,"summary":113},"AFIC901N","30 dBm, 1.8-1000 MHz, 7.5 V Data Sheet",{"pn_display":115,"pn_norm":115,"summary":116},"MHV5IC1810N","R2 1805-1990 MHz, 5 W Avg., 28 V GSM\u002FGSM EDGE RF LDMOS Wideband Integrated Power Amplifier",{"pn_display":118,"pn_norm":118,"summary":119},"MRF6S19100H","R3, MRF6S19100HSR3 1930-1990 MHz, 22 W Avg., 28 V, 2 x N-CDMA Lateral N-Channel RF Power MOSFETs",{"pn_display":121,"pn_norm":121,"summary":122},"MRF6S19120H","1930-1990 MHz, 19 W Avg., 28 V Single N-CDMA Lateral N-Channel RF Power MOSFETs",{"pn_display":124,"pn_norm":125,"summary":126},"MRF9060-2","MRF90602","MRF9060LR1 945 MHz, 60 W, 26 V Lateral N-Channel Broadband RF Power MOSFET",{"pn_display":128,"pn_norm":128,"summary":129},"MRFE6VP61K25N","MRFE6VP61K25GN 1.8–600 MHz, 1250 W CW, 50 V Wideband RF Power LDMOS Transistors Data Sheet",{"pn_display":131,"pn_norm":131,"summary":132},"MRFG35010MT1","3.5 GHz, 9 W, 12 V Power FET GaAs PHEMT",{"pn_display":134,"pn_norm":134,"summary":135},"MW4IC001N","R4 800-2170 MHz, 900 mW, 28 V W-CDMA RF LDMOS Wideband Integrated Power Amplifiers",{"pn_display":137,"pn_norm":137,"summary":138},"A3I25X050N","2300-2700 MHz, 5.6 W Avg, 28 V Data Sheet",{"pn_display":140,"pn_norm":140,"summary":141},"MHL19338N","1900-2000 MHz, 4.0 W, 30 dB RF Linear LDMOS Amplifier"]