[{"data":1,"prerenderedAt":-1},["ShallowReactive",2],{"part:nxp:MHVIC910HR2":3},{"part":4,"mfr":16,"docs":22,"aliases":31,"alts":32,"breadcrumbs":33,"related":39,"more_from_mfr":47},{"id":5,"pn":6,"pn_norm":6,"series":7,"package":7,"lifecycle":8,"summary":9,"params":10,"features":11,"pins":7,"updated_at":12,"category_name":13,"category_name_en":14,"category_path":15},13197,"MHVIC910HR2",null,"eol","960 MHz, 10 W, 26 V GSM Cellular RF LDMOS Integrated Circuit",[],[],"2026-10-10T13:01:01.608Z","射频功率器件","RF Power","rf.power",{"slug":17,"name_en":18,"name_cn":19,"website":20,"is_domestic":21},"nxp","NXP","恩智浦","https:\u002F\u002Fwww.nxp.com",false,[23],{"id":5,"filename":24,"title":25,"pages":26,"size_bytes":27,"lang":7,"doc_version":7,"published_at":7,"role":28,"outline_count":29,"thumb":30},"NXP-MHVIC910HR2.pdf","MHVIC910HR2 960 MHz, 10 W, 26 V GSM Cellular RF LDMOS Integrated Circuit",11,353693,"datasheet",0,"\u002Fthumbs\u002Ff7\u002F88\u002Ff7885a4cfb7fcd863ad8f4908eff07a9fc39b43e74748e856d67472f3186edaa.jpg",[],[],[34,38],{"name":35,"name_en":36,"path":37},"射频 \u002F 无线","RF \u002F Wireless","rf",{"name":13,"name_en":14,"path":15},[40,42,45],{"pn_display":41,"pn_norm":41,"package":7,"summary":9},"MHVIC910HNR2",{"pn_display":43,"pn_norm":43,"package":7,"summary":44},"MHVIC915NR2","746-960 MHz, 15 W, 27 V Single N-CDMA, GSM\u002FGSM EDGE, RF LDMOS Wideband Integrated Power Amplifier",{"pn_display":46,"pn_norm":46,"package":7,"summary":44},"MHVIC915R2",[48,51,54,57,60,63,66,69,72,75,78,81],{"pn_display":49,"pn_norm":49,"summary":50},"A2I20H060N","1800-2200 MHz, 12 W Avg, 28 V Data Sheet",{"pn_display":52,"pn_norm":52,"summary":53},"A2I25H060N","2300-2690 MHz, 10.5 W Avg, 28 V Data Sheet",{"pn_display":55,"pn_norm":55,"summary":56},"AFIC901N","30 dBm, 1.8-1000 MHz, 7.5 V Data Sheet",{"pn_display":58,"pn_norm":58,"summary":59},"MHL21336NN","2110-2170 MHz, 3.0 W, 31 dB RF Linear LDMOS Amplifier",{"pn_display":61,"pn_norm":61,"summary":62},"MHV5IC1810N","R2 1805-1990 MHz, 5 W Avg., 28 V GSM\u002FGSM EDGE RF LDMOS Wideband Integrated Power Amplifier",{"pn_display":64,"pn_norm":64,"summary":65},"MMRF1006H","10-500 MHz, 1000 W, 50 V Data Sheet",{"pn_display":67,"pn_norm":67,"summary":68},"MMRF1013H","2700-2900 MHz, 320 W, 30 V Pulse S-Band RF Power MOSFETs",{"pn_display":70,"pn_norm":70,"summary":71},"MRF1550T1","175 MHz, 50 W, 12.5 V Lateral N-Channel Broadband RF Power MOSFETs",{"pn_display":73,"pn_norm":73,"summary":74},"MRF373","470-860 MHz, 60 W, 28 V Lateral N-Channel Broadband RF Power MOSFETs",{"pn_display":76,"pn_norm":76,"summary":77},"MRF5S21100H","2110-2170 MHz, 23 W Avg., 28 V, 2 x W-CDMA Lateral N-Channel RF Power MOSFETs",{"pn_display":79,"pn_norm":79,"summary":80},"MRF6S19100H","R3, MRF6S19100HSR3 1930-1990 MHz, 22 W Avg., 28 V, 2 x N-CDMA Lateral N-Channel RF Power MOSFETs",{"pn_display":82,"pn_norm":82,"summary":83},"MRF6S19120H","1930-1990 MHz, 19 W Avg., 28 V Single N-CDMA Lateral N-Channel RF Power MOSFETs"]