[{"data":1,"prerenderedAt":-1},["ShallowReactive",2],{"part:nxp:A2G35S20001S":3},{"part":4,"mfr":17,"docs":23,"aliases":32,"alts":36,"breadcrumbs":37,"related":43,"more_from_mfr":44},{"id":5,"pn":6,"pn_norm":7,"series":8,"package":8,"lifecycle":9,"summary":10,"params":11,"features":12,"pins":8,"updated_at":13,"category_name":14,"category_name_en":15,"category_path":16},11168,"A2G35S200-01S","A2G35S20001S",null,"active","3400-3600 MHz, 30 W Avg, 48 V GaN Data Sheet",[],[],"2026-10-10T13:01:01.608Z","SiC \u002F GaN 宽禁带器件","SiC \u002F GaN Wide-Bandgap","discrete.sic",{"slug":18,"name_en":19,"name_cn":20,"website":21,"is_domestic":22},"nxp","NXP","恩智浦","https:\u002F\u002Fwww.nxp.com",false,[24],{"id":5,"filename":25,"title":26,"pages":27,"size_bytes":28,"lang":8,"doc_version":8,"published_at":8,"role":29,"outline_count":30,"thumb":31},"NXP-A2G35S20001S.pdf","A2G35S200-01S 3400-3600 MHz, 30 W Avg, 48 V GaN Data Sheet",10,347297,"datasheet",0,"\u002Fthumbs\u002F44\u002Fd9\u002F44d9a8ec5c48d8082a36485214894b4e28e02f820102841536eb4a5a6ab77aa4.jpg",[33],{"alias_norm":34,"kind":35},"A2G35S20001","base",[],[38,42],{"name":39,"name_en":40,"path":41},"分立器件","Discretes","discrete",{"name":14,"name_en":15,"path":16},[],[45,49,53,56,58,60,63,66,69,72,76,80],{"pn_display":46,"pn_norm":47,"summary":48},"A2G35S160-01S","A2G35S16001S","3400-3600 MHz, 32 W Avg, 48 V GaN Data Sheet",{"pn_display":50,"pn_norm":51,"summary":52},"A3G20S350-01S","A3G20S35001S","2110-2170 MHz, 59 W Avg, 48 V GaN Data Sheet",{"pn_display":54,"pn_norm":54,"summary":55},"A5G07H800W19N","Airfast RF Power GaN Amplifier",{"pn_display":57,"pn_norm":57,"summary":55},"A5G21H605W19N",{"pn_display":59,"pn_norm":59,"summary":55},"A5G26H606W19N",{"pn_display":61,"pn_norm":61,"summary":62},"A5G26S004N","2300-2690 MHz, 24 dBm Avg, 48 V Data Sheet",{"pn_display":64,"pn_norm":64,"summary":65},"A5G35S004N","3300–4300 MHz, 24.5 dBm Avg, 48 V Data Sheet",{"pn_display":67,"pn_norm":67,"summary":68},"GD3160","Advanced IGBT\u002FSiC gate driver",{"pn_display":70,"pn_norm":70,"summary":71},"GD3162","short data sheet",{"pn_display":73,"pn_norm":74,"summary":75},"A2G22S160-01S","A2G22S16001S","1800–2200 MHz, 32 W AVG., 48 V Airfast RF Power GaN Transistor Data Sheet",{"pn_display":77,"pn_norm":78,"summary":79},"A2G22S190-01S","A2G22S19001S","1800-2200 MHz, 36 W Avg, 48 V GaN Data Sheet",{"pn_display":81,"pn_norm":82,"summary":83},"A2G22S251-01S","A2G22S25101S","1805-2200 MHz, 48 W Avg, 48 V GaN Data Sheet"]