逻辑门 / 触发器

N-Channel Logic Level Enhancement Mode Field Effect Transistor

Field Effect Transistor - N‐Channel, Logic Level, Enhancement Mode

P-Channel Logic Level Enhancement Mode Field Effect Transistor

Intelligent Power Module (IPM) Inverter, 1200 V, 15 A

Intelligent Power Module (IPM) Inverter, 1200 V, 25 A

Intelligent Power Module (IPM) Inverter, 1200 V, 70 A

Intelligent Power Module (IPM) Inverter, 1200 V, 35 A

Intelligent Power Module (IPM) Inverter, 1200 V, 50 A

Single 2-Input AND Gate

Single 2-Input OR Gate

Single 2‐Input AND Gate

Single Inverter with Schmitt Trigger

Single 2‐Input OR Gate

MOSFET – Power, N‐Channel, Logic Level, SOT‐223 3.0 A, 60 V

MOSFET – Power, Dual, N-Channel, Logic Level, Dual SO8FL 60 V, 39 m , 17 A

MOSFET - Power, Single N-Channel, Logic Level, SO8FL 40 V, 0.7 mΩ, 349 A

MOSFET - Power, Single N-Channel, Logic Level, SO8FL 40 V, 0.9 mΩ, 278 A

MOSFET – Power, Single N‐Channel, Logic Level, DUAL COOL®, DFN8 5x6 40 V, 0.5 mΩ, 455 A

MOSFET - Power, Single N-Channel, Logic Level, DUAL COOL, DFN8 5x6

MOSFET - Power, Single, N-Channel, Logic Level, DUAL COOL, DFN8 5x6